{"title":"激光辅助等离子体增强化学气相沉积制备硅锗金属氧化物半导体场效应晶体管的研究","authors":"Ching-Ting Lee, Jian-Gang Lin, H. Lee","doi":"10.1109/GROUP4.2008.4638131","DOIUrl":null,"url":null,"abstract":"SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition\",\"authors\":\"Ching-Ting Lee, Jian-Gang Lin, H. Lee\",\"doi\":\"10.1109/GROUP4.2008.4638131\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638131\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition
SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.
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