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2008 5th IEEE International Conference on Group IV Photonics最新文献

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Delivery of photons generated in silicon photonic crystal nano-cavity through lateral waveguide 硅光子晶体纳米腔中产生的光子通过横向波导的传输
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638155
D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa
{"title":"Delivery of photons generated in silicon photonic crystal nano-cavity through lateral waveguide","authors":"D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa","doi":"10.1109/GROUP4.2008.4638155","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638155","url":null,"abstract":"We demonstrate light transmission from a photonic crystal nano-cavity into a planer photonic crystal waveguide. Enhanced photo-luminescence at a cavity resonant wavelength is observed from the cleaved facet of a waveguide with strong position dependence.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133570366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs-Ge materials integration for electronic and photonic applications 电子和光子应用的GaAs-Ge材料集成
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638177
C. Chia, A. Sridhara, M. Suryana, J. Dong, B. Wang, G. Dalapati, D. Chi
{"title":"GaAs-Ge materials integration for electronic and photonic applications","authors":"C. Chia, A. Sridhara, M. Suryana, J. Dong, B. Wang, G. Dalapati, D. Chi","doi":"10.1109/GROUP4.2008.4638177","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638177","url":null,"abstract":"Antiphase domain defects free GaAs layers grown on Ge(100) offcut substrates with and without an ultra thin AlAs interfacial layer were investigated. SIMS measurements suggest cross-diffusion of Ge, Ga and As atoms at the GaAs/Ge interface has significantly reduced with the presence of the thin AlAs layer. Photoluminescence (PL) measurements suggest complete elimination of PL originated from Ge-based complexes for structure with AlAs interfacial layer. The GaAs/Ge hybrid materials integration will find various applications such as in multijunction photovoltaics, metal-oxide-semiconductor-field-effect-transistors and ultra-low noise avalanche photodiodes. Circular mesas were etched on the GaAs/AlAs/Ge structure and the AlAs layer was oxidized and GaAs-on-insulator-on-Ge structure was demonstrated.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design, fabrication, and characterization of an α-Si:H/α-SiCN multistack waveguide for electro optical modulation 用于电光调制的α-Si:H/α-SiCN多层波导的设计、制造和表征
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638172
S. Rao, F. D. Della Corte, C. Summonte, F. Suriano
{"title":"Design, fabrication, and characterization of an α-Si:H/α-SiCN multistack waveguide for electro optical modulation","authors":"S. Rao, F. D. Della Corte, C. Summonte, F. Suriano","doi":"10.1109/GROUP4.2008.4638172","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638172","url":null,"abstract":"Electro-optical absorption in alpha-Si:H/alpha-SiCxNy multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda=1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133371779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of electron-beam irradiation on the formation of nanocrystalline Si in Al-added amorphous Si films 电子束辐照对添加铝的非晶硅薄膜中纳米晶硅形成的影响
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638171
J. Shim, N. Cho, Jin-Gyu Kim, Yoon-joong Kim, El-Hang Lee
{"title":"Effect of electron-beam irradiation on the formation of nanocrystalline Si in Al-added amorphous Si films","authors":"J. Shim, N. Cho, Jin-Gyu Kim, Yoon-joong Kim, El-Hang Lee","doi":"10.1109/GROUP4.2008.4638171","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638171","url":null,"abstract":"Si nanocrystallites of ~ 10 nm were formed in Al-added amorphous Si films by the irradiation of a focused electron-beam; the crystallite volume fraction in the films varied from ~ 35.7 to ~ 94.8 % as the in-situ temperature was raised from 200 to 400 degC. The activation energy for the nucleation of Si crystallites in the a-Al0.025Si0.975 film under the electron-beam irradiation was measured to be 0.8 plusmn 0.13 eV.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122369070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of compact silicon optical modulator using Photonic Crystal MZI structure 采用光子晶体MZI结构的紧凑型硅光调制器设计
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1117/12.813460
T. Han, Hyun-Shik Lee, El-Hang Lee
{"title":"Design of compact silicon optical modulator using Photonic Crystal MZI structure","authors":"T. Han, Hyun-Shik Lee, El-Hang Lee","doi":"10.1117/12.813460","DOIUrl":"https://doi.org/10.1117/12.813460","url":null,"abstract":"We designed a compact silicon optical modulator using photonic crystal(PhC) Mach-Zehnder interferometer(MZI), where we reduced the length of the modulator by using slow light phenomenon which causes effective phase difference in the MZI.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121020334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Silicon LEDs with antifuse injection 带有防熔丝注入的硅led
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638093
G. Piccolo, T. Hoang, J. Holleman, A. Kovalgin, J. Schmitz
{"title":"Silicon LEDs with antifuse injection","authors":"G. Piccolo, T. Hoang, J. Holleman, A. Kovalgin, J. Schmitz","doi":"10.1109/GROUP4.2008.4638093","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638093","url":null,"abstract":"A novel carrier-confinement structure is proposed and realized to generate light in a silicon diode. A significant enhancement of the external power efficiency is observed compared to reference silicon diodes on SOI.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"361 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122787138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
SOI submicron rib waveguides: Design, fabrication and characterization SOI亚微米肋波导:设计、制造与表征
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638123
Xuejun Xu, Shaowu Chen, Zhiyong Li, Yude Yu, Jinzhong Yu
{"title":"SOI submicron rib waveguides: Design, fabrication and characterization","authors":"Xuejun Xu, Shaowu Chen, Zhiyong Li, Yude Yu, Jinzhong Yu","doi":"10.1109/GROUP4.2008.4638123","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638123","url":null,"abstract":"We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8 dB/mm and bend loss of 0.14 dB/90deg for bends with radius of 5 mum.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124904618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved silicon nanocrystal PL quantum yield by SF6 passivation SF6钝化提高硅纳米晶PL量子产率
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638108
R. Liptak, S. Campbell
{"title":"Improved silicon nanocrystal PL quantum yield by SF6 passivation","authors":"R. Liptak, S. Campbell","doi":"10.1109/GROUP4.2008.4638108","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638108","url":null,"abstract":"This paper demonstrates that an in-line SF6 etching process, which is known to produce high concentrations of free fluorine radicals, can be used to size the nanocrystals without creating a polymeric surface layer. As with the CF4 process, Si-NCs fabricated by this process luminesce well, with the luminescent peak wavelength determined by the particle size, which is controlled by the synthesis and etch processes.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1983 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125457747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermo-optical compensation in high-index-contrast waveguides 高折射率反差波导中的热光学补偿
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638214
W. Ye, R. Sun, J. Michel, L. Eldada, D. Pant, L. Kimerling
{"title":"Thermo-optical compensation in high-index-contrast waveguides","authors":"W. Ye, R. Sun, J. Michel, L. Eldada, D. Pant, L. Kimerling","doi":"10.1109/GROUP4.2008.4638214","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638214","url":null,"abstract":"Thermo-optical compensation in high-index contrast waveguide system (a-Si on SiO2) is reported using different cladding materials. We experimentally demonstrate the thermo-optically compensated a-Si based racetrack ring resonators with an acrylate polymer cladding.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126075096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Si wire optical waveguide wavelength demultiplexer for ONU 用于ONU的Si线光波导波长解复用器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638113
H. Okayama, H. Yaegashi, Y. Ogawa
{"title":"Si wire optical waveguide wavelength demultiplexer for ONU","authors":"H. Okayama, H. Yaegashi, Y. Ogawa","doi":"10.1109/GROUP4.2008.4638113","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638113","url":null,"abstract":"We report a compact wavelength demultiplexer design for widely separated wavelengths used in ONU. The Mach-Zehnder lattice interferometeric filter structure is chosen. The large wavelength dispersion of the Si wire waveguide requires special design considerations.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114366676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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