S. Rao, F. D. Della Corte, C. Summonte, F. Suriano
{"title":"用于电光调制的α-Si:H/α-SiCN多层波导的设计、制造和表征","authors":"S. Rao, F. D. Della Corte, C. Summonte, F. Suriano","doi":"10.1109/GROUP4.2008.4638172","DOIUrl":null,"url":null,"abstract":"Electro-optical absorption in alpha-Si:H/alpha-SiCxNy multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda=1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design, fabrication, and characterization of an α-Si:H/α-SiCN multistack waveguide for electro optical modulation\",\"authors\":\"S. Rao, F. D. Della Corte, C. Summonte, F. Suriano\",\"doi\":\"10.1109/GROUP4.2008.4638172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electro-optical absorption in alpha-Si:H/alpha-SiCxNy multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda=1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638172\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design, fabrication, and characterization of an α-Si:H/α-SiCN multistack waveguide for electro optical modulation
Electro-optical absorption in alpha-Si:H/alpha-SiCxNy multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda=1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.