SOI submicron rib waveguides: Design, fabrication and characterization

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638123

Xuejun Xu, Shaowu Chen, Zhiyong Li, Yude Yu, Jinzhong Yu

引用次数: 2

Abstract

We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8 dB/mm and bend loss of 0.14 dB/90deg for bends with radius of 5 mum.

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SOI亚微米肋波导:设计、制造与表征

我们提出了基于绝缘体上硅的亚微米肋波导的详细设计、制造和表征问题。采用EBL和ICP工艺制备的波导的传播损耗为1.8 dB/mm，弯曲损耗为0.14 dB/90°，弯曲半径为5 μ m。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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