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2008 5th IEEE International Conference on Group IV Photonics最新文献

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Whispering-gallery modes and Purcell effect in a Si-nanocrystal-based single microdisk resonator 基于硅纳米晶体的单微盘谐振器中的低语廊模式和珀塞尔效应
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638153
M. Ghulinyan, D. Navarro‐Urrios, A. Pitanti, A. Lui, G. Pucker, Lorenzo Pavesi
{"title":"Whispering-gallery modes and Purcell effect in a Si-nanocrystal-based single microdisk resonator","authors":"M. Ghulinyan, D. Navarro‐Urrios, A. Pitanti, A. Lui, G. Pucker, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638153","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638153","url":null,"abstract":"We report on visible light WGM emission from Si-nanocrystal-based all-active microdisk resonators. The observed significant, 13-fold mode narrowing (Q~2800) at lowest excitation powers is attributed to the attenuation of pump-induced excited carrier absorption loss mechanism.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1075 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122893268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Waveguide coupled Ge-on-oxide photodetectors for integrated optical links 集成光链路用波导耦合氧化锗光电探测器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638138
M. Reshotko, B. Block, Ben Jin, P. Chang
{"title":"Waveguide coupled Ge-on-oxide photodetectors for integrated optical links","authors":"M. Reshotko, B. Block, Ben Jin, P. Chang","doi":"10.1109/GROUP4.2008.4638138","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638138","url":null,"abstract":"We demonstrate Ge MSM photodetectors with responsivities of 0.9 A/W at 1310 nm and capable of data rates of 20 Gb/s. Direct Ge on oxide deposition makes these photodetectors potentially suitable for CMOS back-end optical links.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125031575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
1.5 μm light emission from Er-doped low-x SiOx with widegap semiconductor carrier injection layers 具有宽间隙半导体载流子注入层的掺铒低x SiOx的1.5 μm光发射
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638127
S. Soneda, T. Minami, K. Ito, A. Kotake, S. Nakano, Y. Naka, N. Yamamoto, M. Tsuchiya, Y. Nakamura
{"title":"1.5 μm light emission from Er-doped low-x SiOx with widegap semiconductor carrier injection layers","authors":"S. Soneda, T. Minami, K. Ito, A. Kotake, S. Nakano, Y. Naka, N. Yamamoto, M. Tsuchiya, Y. Nakamura","doi":"10.1109/GROUP4.2008.4638127","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638127","url":null,"abstract":"We have observed room-temperature 1.5 mum-infrared electroluminescence from a silicon suboxide-based p-i-n heterostructure: n-SnO<sub>2</sub>/Er-doped SiO<sub>x</sub>/p-GaN. The n-SnO<sub>2</sub> and p-GaN layers are introduced for efficient current-injection via their widegap semiconductor properties.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125534988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low driving-voltage optical modulator based on carrier depletion in silicon with periodically interleaved P-N junctions 基于周期性交错P-N结硅载流子耗尽的低驱动电压光调制器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638080
Z. Li, D. Xu, R. Mckinnon, S. Janz, J. Schmid, J. Lapointe, P. Cheben, J.Z. Yu
{"title":"Low driving-voltage optical modulator based on carrier depletion in silicon with periodically interleaved P-N junctions","authors":"Z. Li, D. Xu, R. Mckinnon, S. Janz, J. Schmid, J. Lapointe, P. Cheben, J.Z. Yu","doi":"10.1109/GROUP4.2008.4638080","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638080","url":null,"abstract":"We present the novel design of a silicon modulator with low operation voltage of les3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 Vldrcm.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124471395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon photonic WDM point-to-point network for multi-chip processor interconnects 用于多芯片处理器互连的硅光子WDM点对点网络
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638206
Xuezhe Zheng, P. Koka, H. Schwetman, J. Lexau, R. Ho, J. Cunningham, A. Krishnamoorthy
{"title":"Silicon photonic WDM point-to-point network for multi-chip processor interconnects","authors":"Xuezhe Zheng, P. Koka, H. Schwetman, J. Lexau, R. Ho, J. Cunningham, A. Krishnamoorthy","doi":"10.1109/GROUP4.2008.4638206","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638206","url":null,"abstract":"We introduce a silicon photonic WDM point-to-point network enabled by novel optical proximity communications. This strictly non-blocking network provides scalable interconnectivity between chips low latency and high bisection bandwidth.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116251210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Vertical emitting lasers based on 2D Photonic Crystal heterostructure coupled to strip silicon waveguide 基于二维光子晶体异质结构与条形硅波导耦合的垂直发射激光器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638100
L. Ferrier, O. E. Daif, P. Rojo-Romeo, X. Letartre, E. Drouard, P. Viktorovitch
{"title":"Vertical emitting lasers based on 2D Photonic Crystal heterostructure coupled to strip silicon waveguide","authors":"L. Ferrier, O. E. Daif, P. Rojo-Romeo, X. Letartre, E. Drouard, P. Viktorovitch","doi":"10.1109/GROUP4.2008.4638100","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638100","url":null,"abstract":"We fabricate a compact 2D photonic crystal (PC) vertical emitting laser at 1.5 mum, based on slow Bloch mode confinement in a 20 PC heterostructure. The 2D PC, consisting of a square lattice of indium phosphide (InP) micropillar, is bonded on a silicon/silica Bragg mirror. We study the coupling between the 2D PC heterostructure and a silicon strip waveguide around the lasing wavelength.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115814560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
50-element cascaded-resonator devices with gapless non-evanescent coupling using double-notch-shaped microdisks on a silicon chip 50元级联谐振器的无间隙非消失耦合使用双缺口形状的微盘在硅片上
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638196
Xianshu Luo, A. Poon
{"title":"50-element cascaded-resonator devices with gapless non-evanescent coupling using double-notch-shaped microdisks on a silicon chip","authors":"Xianshu Luo, A. Poon","doi":"10.1109/GROUP4.2008.4638196","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638196","url":null,"abstract":"We propose many-element cascaded-resonator devices with gapless non-evanescent inter-cavity and waveguide-to-cavity coupling using double-notch-shaped microdisk resonators. We demonstrate such devices with up to 50 elements in a silicon nitride-on-silica substrate.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124135105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Enhanced nonlinear self-phase modulation in engineered slow light silicon photonic crystal waveguides 工程慢光硅光子晶体波导中增强的非线性自相位调制
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638159
C. Monat, B. Corcoran, C. Grillet, B. Eggleton, T. White, L. O’Faolain, T. Krauss
{"title":"Enhanced nonlinear self-phase modulation in engineered slow light silicon photonic crystal waveguides","authors":"C. Monat, B. Corcoran, C. Grillet, B. Eggleton, T. White, L. O’Faolain, T. Krauss","doi":"10.1109/GROUP4.2008.4638159","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638159","url":null,"abstract":"We demonstrate enhanced self-phase modulation through short dispersion-engineered slow light silicon photonic crystal waveguides using picosecond pulses. The measurements are supported by simulations, highlighting the simultaneous reinforcement of nonlinear absorption and free carriers.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126824090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultralow energy, integrated GeSi electroabsorption modulators on SOI 在SOI上集成超低能量GeSi电吸收调制器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638079
Jifeng Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, Jing Cheng, L. Kimerling, J. Michel
{"title":"Ultralow energy, integrated GeSi electroabsorption modulators on SOI","authors":"Jifeng Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, Jing Cheng, L. Kimerling, J. Michel","doi":"10.1109/GROUP4.2008.4638079","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638079","url":null,"abstract":"We report a waveguide-integrated, gigahertz GeSi electroabsorption modulator on SOI with a 10 dB extinction ratio at 1540 nm, a ultralow energy consumption of 50 fJ/bit, and an operation spectrum range of 1539-1553 nm.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126253607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Monolithically integrated high-speed CMOS photonic transceivers 单片集成高速CMOS光子收发器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638200
T. Pinguet, B. Analui, E. Balmater, D. Guckenberger, M. Harrison, R. Koumans, D. Kucharski, Y. Liang, G. Masini, A. Mekis, S. Mirsaidi, A. Narasimha, M. Peterson, D. Rines, V. Sadagopan, S. Sahni, T. J. Sleboda, D. Song, Y. Wang, B. Welch, J. Witzens, J. Yao, S. Abdalla, S. Gloeckner, P. D. De Dobbelaere, G. Capellini
{"title":"Monolithically integrated high-speed CMOS photonic transceivers","authors":"T. Pinguet, B. Analui, E. Balmater, D. Guckenberger, M. Harrison, R. Koumans, D. Kucharski, Y. Liang, G. Masini, A. Mekis, S. Mirsaidi, A. Narasimha, M. Peterson, D. Rines, V. Sadagopan, S. Sahni, T. J. Sleboda, D. Song, Y. Wang, B. Welch, J. Witzens, J. Yao, S. Abdalla, S. Gloeckner, P. D. De Dobbelaere, G. Capellini","doi":"10.1109/GROUP4.2008.4638200","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638200","url":null,"abstract":"We demonstrate monolithically integrated 4×10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125211192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 82
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