{"title":"Waveguide coupled Ge-on-oxide photodetectors for integrated optical links","authors":"M. Reshotko, B. Block, Ben Jin, P. Chang","doi":"10.1109/GROUP4.2008.4638138","DOIUrl":null,"url":null,"abstract":"We demonstrate Ge MSM photodetectors with responsivities of 0.9 A/W at 1310 nm and capable of data rates of 20 Gb/s. Direct Ge on oxide deposition makes these photodetectors potentially suitable for CMOS back-end optical links.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
We demonstrate Ge MSM photodetectors with responsivities of 0.9 A/W at 1310 nm and capable of data rates of 20 Gb/s. Direct Ge on oxide deposition makes these photodetectors potentially suitable for CMOS back-end optical links.