Waveguide coupled Ge-on-oxide photodetectors for integrated optical links

M. Reshotko, B. Block, Ben Jin, P. Chang
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引用次数: 18

Abstract

We demonstrate Ge MSM photodetectors with responsivities of 0.9 A/W at 1310 nm and capable of data rates of 20 Gb/s. Direct Ge on oxide deposition makes these photodetectors potentially suitable for CMOS back-end optical links.
集成光链路用波导耦合氧化锗光电探测器
我们展示了在1310 nm处响应度为0.9 A/W,数据速率为20 Gb/s的Ge MSM光电探测器。直接氧化锗沉积使这些光电探测器有可能适用于CMOS后端光学链路。
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