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2008 5th IEEE International Conference on Group IV Photonics最新文献

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Box-shaped and A-shaped low-loss waveguides in Si3N4/SiO2 TriPleX technology Si3N4/SiO2 TriPleX技术中的箱形和a形低损耗波导
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638150
F. Morichetti, A. Melloni, M. Martinelli, A. Leinse, D. Geuzebroek, R. Heideman
{"title":"Box-shaped and A-shaped low-loss waveguides in Si3N4/SiO2 TriPleX technology","authors":"F. Morichetti, A. Melloni, M. Martinelli, A. Leinse, D. Geuzebroek, R. Heideman","doi":"10.1109/GROUP4.2008.4638150","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638150","url":null,"abstract":"Dielectric waveguides with a box-shaped and an A-shaped cross-section realized in the emerging Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> TriPleX technology are experimentally compared. Box-shaped waveguides offer the best compromise between low loss, low polarization-dependent loss and low birefringence.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127125360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A compact slot waveguide directional coupler-based silicon-on-insulator polarization splitter 一种紧凑的基于槽波导定向耦合器的绝缘体上硅偏振分配器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638178
Yao-Feng Ma, Ding-Wei Huang
{"title":"A compact slot waveguide directional coupler-based silicon-on-insulator polarization splitter","authors":"Yao-Feng Ma, Ding-Wei Huang","doi":"10.1109/GROUP4.2008.4638178","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638178","url":null,"abstract":"A slot waveguide directional coupler-based polarization splitter designed on SOI platform is proposed and analyzed. The geometry of the slot waveguide directional coupler allows significant birefringence for the polarization splitting to be achieved with a suitable design. The polarization splitting in an SOI waveguide device as short as 30 mum can be realized.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128948906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Size distribution of silicon nanoclusters determined by transmission electron microscopy 透射电镜测定硅纳米团簇的尺寸分布
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638168
C. Mokry, P. Simpson, A. Knights
{"title":"Size distribution of silicon nanoclusters determined by transmission electron microscopy","authors":"C. Mokry, P. Simpson, A. Knights","doi":"10.1109/GROUP4.2008.4638168","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638168","url":null,"abstract":"Silicon nanoclusters were formed in SiO2 by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114271136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon photonic wires using contact lithography 采用接触光刻技术的硅光子线
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638165
O. Horn, J. Mueller, T. Lipka, J. Amthor
{"title":"Silicon photonic wires using contact lithography","authors":"O. Horn, J. Mueller, T. Lipka, J. Amthor","doi":"10.1109/GROUP4.2008.4638165","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638165","url":null,"abstract":"In this paper a simple contact lithography with i-line or DUV is used for the production of photonic wires, which are additionally smoothed and shrunk by thermal oxidation.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123311541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intense green light emission from low temperature grown SiNO complex system 低温生长SiNO复合体系的强绿光发射
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638130
Hengping Dong, R. Huang, Danqing Wang, Kunji Chen, Wei Li, Zhongyuan Ma, Jun Xu, Xinfan Huang
{"title":"Intense green light emission from low temperature grown SiNO complex system","authors":"Hengping Dong, R. Huang, Danqing Wang, Kunji Chen, Wei Li, Zhongyuan Ma, Jun Xu, Xinfan Huang","doi":"10.1109/GROUP4.2008.4638130","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638130","url":null,"abstract":"We report intense green photoluminescence from amorphous oxidized silicon nitride film (a-SiN:O). A-SiN:O light-emitting devices of green-yellow color are successfully fabricated. Notably, EL efficiency can be significantly enhanced by modulating Si/N ratio in luminescent active layer.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131423128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structure and photoluminescence comparison of Er2SiO5 and Er2O3 prepared by sol-gel method 溶胶-凝胶法制备Er2SiO5和Er2O3的结构和光致发光比较
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638109
X.J. Wang, H. Isshiki, T. Kimura
{"title":"Structure and photoluminescence comparison of Er2SiO5 and Er2O3 prepared by sol-gel method","authors":"X.J. Wang, H. Isshiki, T. Kimura","doi":"10.1109/GROUP4.2008.4638109","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638109","url":null,"abstract":"Two erbium compound films, Er<sub>2</sub>SiO<sub>5</sub> and Er<sub>2</sub>O<sub>3</sub> were fabricated by sol-gel method using two kinds of starting sol solutions, respectively, and corresponding structure and photoluminescence properties were studied.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128456985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Large birefringence in SOI layer and its application to polarization-insensitive AWG SOI层大双折射特性及其在偏振不敏感AWG中的应用
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638216
D. Hirahara, K. Sasaki, T. Ishii, T. Baba
{"title":"Large birefringence in SOI layer and its application to polarization-insensitive AWG","authors":"D. Hirahara, K. Sasaki, T. Ishii, T. Baba","doi":"10.1109/GROUP4.2008.4638216","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638216","url":null,"abstract":"We evaluated a large birefringence of 0.85 in a SOI layer by totally analyzing the measured index and theoretical and experimental dispersion characteristics of Si photonic wires. It was applied to an ultracompact polarization-insensitive AWG.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121633965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase and group birefringence of silicon waveguides 硅波导的相位和群双折射
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638143
T. Pagel, S. Gade, M. Krause, H. Renner, E. Brinkmeyer
{"title":"Phase and group birefringence of silicon waveguides","authors":"T. Pagel, S. Gade, M. Krause, H. Renner, E. Brinkmeyer","doi":"10.1109/GROUP4.2008.4638143","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638143","url":null,"abstract":"Experimental data of phase and group birefringence are presented for numerous SOI waveguides. The measurements are enabled by a novel easily surveyed analysis of the magneto-optic determination method and allow for spatially resolved evaluation.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125259313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Monolithic integration of three-dimensional multimode interference couplers with silicon photonic wires via self-profile transformation 基于自轮廓变换的硅光子线三维多模干涉耦合器的单片集成
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638146
W. Chiu, Chee-Yin Lu, M.-C.M. Lee
{"title":"Monolithic integration of three-dimensional multimode interference couplers with silicon photonic wires via self-profile transformation","authors":"W. Chiu, Chee-Yin Lu, M.-C.M. Lee","doi":"10.1109/GROUP4.2008.4638146","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638146","url":null,"abstract":"A novel 3-D MMI coupler with silicon photonic wires is demonstrated using self-profile transformation for the first time. The preliminary simulation results show the low excess loss of 0.27 dB.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114486737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon 银局域表面等离激元诱导富硅氮化硅薄膜的光致发光增强
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638116
Dongsheng Li, Peihong Cheng, Deren Yang
{"title":"Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon","authors":"Dongsheng Li, Peihong Cheng, Deren Yang","doi":"10.1109/GROUP4.2008.4638116","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638116","url":null,"abstract":"The photoluminescence of silicon-rich silicon nitride (SRSN) film was enhanced by coupling with the localized surface plasmon of Ag island film. It is found that the deposited Ag film induces an enhancement of excitation of SRSN film through increasing the absorption of SRSN film. Furthermore, it is demonstrated that the emission enhancement is much more decided by the excitation wavelength than by the Ag island scattering.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116647232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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