Intense green light emission from low temperature grown SiNO complex system

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638130

Hengping Dong, R. Huang, Danqing Wang, Kunji Chen, Wei Li, Zhongyuan Ma, Jun Xu, Xinfan Huang

引用次数: 0

Abstract

We report intense green photoluminescence from amorphous oxidized silicon nitride film (a-SiN:O). A-SiN:O light-emitting devices of green-yellow color are successfully fabricated. Notably, EL efficiency can be significantly enhanced by modulating Si/N ratio in luminescent active layer.

查看原文本刊更多论文

低温生长SiNO复合体系的强绿光发射

我们报道了非晶氧化氮化硅薄膜(a-SiN:O)的强烈绿色光致发光。成功制备了黄绿色的A-SiN:O发光器件。值得注意的是，通过调制发光有源层中的Si/N比，可以显著提高发光效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 5th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量