{"title":"透射电镜测定硅纳米团簇的尺寸分布","authors":"C. Mokry, P. Simpson, A. Knights","doi":"10.1109/GROUP4.2008.4638168","DOIUrl":null,"url":null,"abstract":"Silicon nanoclusters were formed in SiO2 by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Size distribution of silicon nanoclusters determined by transmission electron microscopy\",\"authors\":\"C. Mokry, P. Simpson, A. Knights\",\"doi\":\"10.1109/GROUP4.2008.4638168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon nanoclusters were formed in SiO2 by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Size distribution of silicon nanoclusters determined by transmission electron microscopy
Silicon nanoclusters were formed in SiO2 by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
