Size distribution of silicon nanoclusters determined by transmission electron microscopy

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638168

C. Mokry, P. Simpson, A. Knights

引用次数: 0

Abstract

Silicon nanoclusters were formed in SiO2 by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.

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透射电镜测定硅纳米团簇的尺寸分布

通过离子注入和退火，在SiO2中形成了硅纳米团簇。透射电子显微镜(TEM)图像研究了它们的尺寸分布作为氧化膜深度的函数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 5th IEEE International Conference on Group IV Photonics

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