单片集成高速CMOS光子收发器

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638200

T. Pinguet, B. Analui, E. Balmater, D. Guckenberger, M. Harrison, R. Koumans, D. Kucharski, Y. Liang, G. Masini, A. Mekis, S. Mirsaidi, A. Narasimha, M. Peterson, D. Rines, V. Sadagopan, S. Sahni, T. J. Sleboda, D. Song, Y. Wang, B. Welch, J. Witzens, J. Yao, S. Abdalla, S. Gloeckner, P. D. De Dobbelaere, G. Capellini

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引用次数: 82

摘要

我们展示了单片集成4×10 Gb/s WDM收发器，内置在生产130 nm SOI CMOS工艺中。只有光源在芯片的外部。演示了40gb /s无差错双向传输。

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Monolithically integrated high-speed CMOS photonic transceivers

We demonstrate monolithically integrated 4×10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.

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2008 5th IEEE International Conference on Group IV Photonics

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