Z. Li, D. Xu, R. Mckinnon, S. Janz, J. Schmid, J. Lapointe, P. Cheben, J.Z. Yu
{"title":"基于周期性交错P-N结硅载流子耗尽的低驱动电压光调制器","authors":"Z. Li, D. Xu, R. Mckinnon, S. Janz, J. Schmid, J. Lapointe, P. Cheben, J.Z. Yu","doi":"10.1109/GROUP4.2008.4638080","DOIUrl":null,"url":null,"abstract":"We present the novel design of a silicon modulator with low operation voltage of les3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 Vldrcm.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low driving-voltage optical modulator based on carrier depletion in silicon with periodically interleaved P-N junctions\",\"authors\":\"Z. Li, D. Xu, R. Mckinnon, S. Janz, J. Schmid, J. Lapointe, P. Cheben, J.Z. Yu\",\"doi\":\"10.1109/GROUP4.2008.4638080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the novel design of a silicon modulator with low operation voltage of les3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 Vldrcm.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low driving-voltage optical modulator based on carrier depletion in silicon with periodically interleaved P-N junctions
We present the novel design of a silicon modulator with low operation voltage of les3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 Vldrcm.