1.5 μm light emission from Er-doped low-x SiOx with widegap semiconductor carrier injection layers

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638127

S. Soneda, T. Minami, K. Ito, A. Kotake, S. Nakano, Y. Naka, N. Yamamoto, M. Tsuchiya, Y. Nakamura

引用次数: 0

Abstract

We have observed room-temperature 1.5 mum-infrared electroluminescence from a silicon suboxide-based p-i-n heterostructure: n-SnO₂/Er-doped SiO_x/p-GaN. The n-SnO₂ and p-GaN layers are introduced for efficient current-injection via their widegap semiconductor properties.

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具有宽间隙半导体载流子注入层的掺铒低x SiOx的1.5 μm光发射

我们观察了基于亚氧化硅的p-i-n异质结构:n-SnO2/ er掺杂SiOx/p-GaN的室温1.5 μ m红外电致发光。n-SnO2和p-GaN层通过其宽间隙半导体特性引入了有效的电流注入。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 5th IEEE International Conference on Group IV Photonics

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