{"title":"集成光链路用波导耦合氧化锗光电探测器","authors":"M. Reshotko, B. Block, Ben Jin, P. Chang","doi":"10.1109/GROUP4.2008.4638138","DOIUrl":null,"url":null,"abstract":"We demonstrate Ge MSM photodetectors with responsivities of 0.9 A/W at 1310 nm and capable of data rates of 20 Gb/s. Direct Ge on oxide deposition makes these photodetectors potentially suitable for CMOS back-end optical links.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Waveguide coupled Ge-on-oxide photodetectors for integrated optical links\",\"authors\":\"M. Reshotko, B. Block, Ben Jin, P. Chang\",\"doi\":\"10.1109/GROUP4.2008.4638138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate Ge MSM photodetectors with responsivities of 0.9 A/W at 1310 nm and capable of data rates of 20 Gb/s. Direct Ge on oxide deposition makes these photodetectors potentially suitable for CMOS back-end optical links.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638138\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Waveguide coupled Ge-on-oxide photodetectors for integrated optical links
We demonstrate Ge MSM photodetectors with responsivities of 0.9 A/W at 1310 nm and capable of data rates of 20 Gb/s. Direct Ge on oxide deposition makes these photodetectors potentially suitable for CMOS back-end optical links.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
