Low driving-voltage optical modulator based on carrier depletion in silicon with periodically interleaved P-N junctions

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638080

Z. Li, D. Xu, R. Mckinnon, S. Janz, J. Schmid, J. Lapointe, P. Cheben, J.Z. Yu

引用次数: 1

Abstract

We present the novel design of a silicon modulator with low operation voltage of les3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 Vldrcm.

查看原文本刊更多论文

基于周期性交错P-N结硅载流子耗尽的低驱动电压光调制器

我们提出了一种利用周期性交错pn结设计的低工作电压为les3v的硅调制器。仿真结果表明，在耗尽模式下，它具有优于1.5 Vldrcm的调制效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 5th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量