在SOI上集成超低能量GeSi电吸收调制器

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638079

Jifeng Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, Jing Cheng, L. Kimerling, J. Michel

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引用次数: 31

摘要

我们报道了一种基于SOI的波导集成、千兆赫GeSi电吸收调制器，该调制器在1540 nm处消光比为10 dB，超低能耗为50 fJ/bit，工作光谱范围为1539-1553 nm。

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Ultralow energy, integrated GeSi electroabsorption modulators on SOI

We report a waveguide-integrated, gigahertz GeSi electroabsorption modulator on SOI with a 10 dB extinction ratio at 1540 nm, a ultralow energy consumption of 50 fJ/bit, and an operation spectrum range of 1539-1553 nm.

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2008 5th IEEE International Conference on Group IV Photonics

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