Improved silicon nanocrystal PL quantum yield by SF6 passivation

Abstract

This paper demonstrates that an in-line SF6 etching process, which is known to produce high concentrations of free fluorine radicals, can be used to size the nanocrystals without creating a polymeric surface layer. As with the CF4 process, Si-NCs fabricated by this process luminesce well, with the luminescent peak wavelength determined by the particle size, which is controlled by the synthesis and etch processes.