Design, fabrication, and characterization of an α-Si:H/α-SiCN multistack waveguide for electro optical modulation

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638172

S. Rao, F. D. Della Corte, C. Summonte, F. Suriano

引用次数: 0

Abstract

Electro-optical absorption in alpha-Si:H/alpha-SiCxNy multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda=1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.

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用于电光调制的α-Si:H/α-SiCN多层波导的设计、制造和表征

利用PECVD技术研究了三种不同平面多层波导中α - si:H/ α - sicxny多层膜的电光吸收。在λ =1.55 μ m处，通过电场在多绝缘体/半导体器件上施加载流子积累，诱导光吸收。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 5th IEEE International Conference on Group IV Photonics

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