A. Pitanti, D. Navarro‐Urrios, R. Guider, N. Daldosso, L. Khomenkova, F. Gourbilleau, C. Oton, W. Loh, R. Rizk, O. Jambois, B. Garrido, Lorenzo Pavesi
{"title":"Er3+与硅纳米簇肋波导的耦合","authors":"A. Pitanti, D. Navarro‐Urrios, R. Guider, N. Daldosso, L. Khomenkova, F. Gourbilleau, C. Oton, W. Loh, R. Rizk, O. Jambois, B. Garrido, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638148","DOIUrl":null,"url":null,"abstract":"Er doped nano-Si system has been optimised in terms of photoluminescence intensity and lifetime. Reduction of carrier absorption losses and increasing of the number of Er ions coupled to Si-nc (around 25%) have been achieved.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"31 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Er3+ coupled to Si nanoclusters rib waveguides\",\"authors\":\"A. Pitanti, D. Navarro‐Urrios, R. Guider, N. Daldosso, L. Khomenkova, F. Gourbilleau, C. Oton, W. Loh, R. Rizk, O. Jambois, B. Garrido, Lorenzo Pavesi\",\"doi\":\"10.1109/GROUP4.2008.4638148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Er doped nano-Si system has been optimised in terms of photoluminescence intensity and lifetime. Reduction of carrier absorption losses and increasing of the number of Er ions coupled to Si-nc (around 25%) have been achieved.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"31 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Er doped nano-Si system has been optimised in terms of photoluminescence intensity and lifetime. Reduction of carrier absorption losses and increasing of the number of Er ions coupled to Si-nc (around 25%) have been achieved.