Michael R. Watts, D. Trotter, R. W. Young, A. Lentine
{"title":"超低功耗硅微盘调制器和开关","authors":"Michael R. Watts, D. Trotter, R. W. Young, A. Lentine","doi":"10.1109/GROUP4.2008.4638077","DOIUrl":null,"url":null,"abstract":"We demonstrate a 4 mum silicon microdisk modulator with a power consumption of 85 fJ/bit. The modulator utilizes a reverse-biased, vertical p-n junction to achieve 10 Gb/s data transmission with 3.5 V drive voltage, BER<10-12, and without signal pre-emphasis. High-speed silicon bandpass switches are constructed from pairs of modulators.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"185","resultStr":"{\"title\":\"Ultralow power silicon microdisk modulators and switches\",\"authors\":\"Michael R. Watts, D. Trotter, R. W. Young, A. Lentine\",\"doi\":\"10.1109/GROUP4.2008.4638077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a 4 mum silicon microdisk modulator with a power consumption of 85 fJ/bit. The modulator utilizes a reverse-biased, vertical p-n junction to achieve 10 Gb/s data transmission with 3.5 V drive voltage, BER<10-12, and without signal pre-emphasis. High-speed silicon bandpass switches are constructed from pairs of modulators.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"185\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultralow power silicon microdisk modulators and switches
We demonstrate a 4 mum silicon microdisk modulator with a power consumption of 85 fJ/bit. The modulator utilizes a reverse-biased, vertical p-n junction to achieve 10 Gb/s data transmission with 3.5 V drive voltage, BER<10-12, and without signal pre-emphasis. High-speed silicon bandpass switches are constructed from pairs of modulators.