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2008 5th IEEE International Conference on Group IV Photonics最新文献

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A 10Gb/s Mach-Zehnder silicon evanescent modulator 10Gb/s Mach-Zehnder硅倏逝调制器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638078
Hui-wen Chen, Y. Kuo, J. Bowers
{"title":"A 10Gb/s Mach-Zehnder silicon evanescent modulator","authors":"Hui-wen Chen, Y. Kuo, J. Bowers","doi":"10.1109/GROUP4.2008.4638078","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638078","url":null,"abstract":"We demonstrate a 10 Gb/s Mach-Zehnder silicon evanescent modulator utilizing coplanar waveguide design. The device has a modulation efficiency of 1.5 V-mm and modulation bandwidth of 8 GHz.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"232 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130344381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon evanescent optical frequency comb generator 硅倏逝光频梳发生器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638098
B. Koch, A. Fang, R. Jones, O. Cohen, M. Paniccia, D. Blumenthal, J. Bowers
{"title":"Silicon evanescent optical frequency comb generator","authors":"B. Koch, A. Fang, R. Jones, O. Cohen, M. Paniccia, D. Blumenthal, J. Bowers","doi":"10.1109/GROUP4.2008.4638098","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638098","url":null,"abstract":"A mode-locked silicon evanescent laser is used to generate over 100 wavelengths evenly spaced by 10 GHz. Optical injection locking reduces the linewidths of the remaining 30 modes to less than 100 kHz.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115841068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nonlinear optics in Si wires on an SOI platform SOI平台上硅线的非线性光学
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638158
R. Osgood, O. Chen, A. Hsieh, J. Dadap, N. Panoiu, Xiaoping Liu, W. Green, Y. Vlasov
{"title":"Nonlinear optics in Si wires on an SOI platform","authors":"R. Osgood, O. Chen, A. Hsieh, J. Dadap, N. Panoiu, Xiaoping Liu, W. Green, Y. Vlasov","doi":"10.1109/GROUP4.2008.4638158","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638158","url":null,"abstract":"We discuss measurement of the nonlinear-optical properties of Si-wire waveguides and the design of these wires for use in on-chip waveguide applications.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"50 14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125476861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The elasto-optic and the thermo-optic effect in silicon nanowires 硅纳米线的弹性光学效应和热光学效应
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638167
J. Amthor, O. Horn, T. Lipka, J. Mueller
{"title":"The elasto-optic and the thermo-optic effect in silicon nanowires","authors":"J. Amthor, O. Horn, T. Lipka, J. Mueller","doi":"10.1109/GROUP4.2008.4638167","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638167","url":null,"abstract":"The elasto-optic and the thermo-optic effect in silicon nanowires is demonstrated using Mach-Zehnder interferometers. The nanowires are placed on undercut SiO2 membranes which can be deflected electrostatically.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132795054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra compact photonic crystal modulator based on silicon nano-pillar array filled with functional polymer 基于硅纳米柱阵列填充功能聚合物的超紧凑光子晶体调制器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638190
Xiaolong Wang, R.T. Chen
{"title":"Ultra compact photonic crystal modulator based on silicon nano-pillar array filled with functional polymer","authors":"Xiaolong Wang, R.T. Chen","doi":"10.1109/GROUP4.2008.4638190","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638190","url":null,"abstract":"We present the optical design of the photonic crystal modulator based on silicon nano-pillar array filled with functional polymer. The device will achieve an ultra compact size and sub-volt driving voltage with the slow-photon effect.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132750120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon nanocrystals in silicon nitride structures: Towards efficient light emission under optical and electrical pumping 氮化硅结构中的硅纳米晶体:在光和电泵浦下的高效发光
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638088
L. Dal Negro, R. Li, J. Warga, S. Basu
{"title":"Silicon nanocrystals in silicon nitride structures: Towards efficient light emission under optical and electrical pumping","authors":"L. Dal Negro, R. Li, J. Warga, S. Basu","doi":"10.1109/GROUP4.2008.4638088","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638088","url":null,"abstract":"In this paper, we will discuss light emission, Er sensitization and electroluminescence from small (2 nm-diameter) Si nanoclusters embedded in silicon nitride/Si superlattice structures fabricated by direct co-sputtering on Si substrates. In particular, we will show efficient Er emission sensitization via controllable non-radiative energy transfer and we will demonstrate enhanced electroluminescence from superlattice-based electrical devices. Our results demonstrate that small Si clusters embedded in silicon nitride-based matrices provide alternative routes towards the fabrication of Si-compatible optical devices based on Er sensitization.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"660 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116097349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Crystalline structure and luminescence properties of Er silicates fabricated on Si and SiO2/Si by the sol-gel method 溶胶-凝胶法制备硅和SiO2/Si复合硅的晶体结构和发光性能
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638110
T. Kimura, X.J. Wang, T. Nakajima, M. Ohe, T. Ushiyama, H. Isshiki
{"title":"Crystalline structure and luminescence properties of Er silicates fabricated on Si and SiO2/Si by the sol-gel method","authors":"T. Kimura, X.J. Wang, T. Nakajima, M. Ohe, T. Ushiyama, H. Isshiki","doi":"10.1109/GROUP4.2008.4638110","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638110","url":null,"abstract":"Well-ordered Er<sub>2</sub>SiO<sub>5</sub> silicates with a fast decay (~10~50mus) of the 1.53mum emission was obtained on Si by sol-ge1. In contrast, Er silicates on SiO<sub>2</sub>/Si showed different luminescence spectra with a slow fluorescence decay (tau > 100mus).","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115858414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low dark-current Ge photodiodes on Si with intrinsic-Si-layer insertion 具有本征硅层插入的低暗电流锗光电二极管
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638137
Sungbong Park, S. Takita, Y. Ishikawa, J. Osaka, K. Wada
{"title":"Low dark-current Ge photodiodes on Si with intrinsic-Si-layer insertion","authors":"Sungbong Park, S. Takita, Y. Ishikawa, J. Osaka, K. Wada","doi":"10.1109/GROUP4.2008.4638137","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638137","url":null,"abstract":"We demonstrated as-grown Ge p-i-n photodiode on Si with low dark current (~10 mA/cm2) and comparable responsivity. Such a low temperature fabrication is crucial to realize ldquobackendrdquo process for Ge integration in Si photonics.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124023073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low reflection double stage coupling to slow light waveguides 低反射双级耦合到慢光波导
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638121
A. Petrov, J. Hampe, M. Eich
{"title":"Low reflection double stage coupling to slow light waveguides","authors":"A. Petrov, J. Hampe, M. Eich","doi":"10.1109/GROUP4.2008.4638121","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638121","url":null,"abstract":"Photonic crystal line-defect waveguides can guide optical modes with substantially reduced group velocity. Efficient coupling to slow light waveguides from silicon strip waveguides can be achieved through double stage mode conversion. First, light is coupled to a normal group velocity line-defect waveguide with anti-reflection adjustment of the photonic crystal interface. The reflected intensity at the first stage was reduced to -35 dB in this paper. Second stage consists of the abrupt change to slow light waveguide with intensity reflection about -20 dB for the mode with group velocity 0.02 c. The reflection at the second stage can be further reduced with adiabatic coupling. A gradual tapering 20 lattice constants long with a cubic taper function leads to less than -40 dB intensity reflection for the investigated mode.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128234961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Cancellation of the temperature dependence in SOI photonic wire ring resonator sensors SOI光子线环谐振器传感器中温度依赖性的消除
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638213
D. Xu, E. Post, A. Densmore, P. Waldron, S. Janz, J. Lapointe, A. Delâge, P. Cheben, J. Schmid, B. Lamontagne
{"title":"Cancellation of the temperature dependence in SOI photonic wire ring resonator sensors","authors":"D. Xu, E. Post, A. Densmore, P. Waldron, S. Janz, J. Lapointe, A. Delâge, P. Cheben, J. Schmid, B. Lamontagne","doi":"10.1109/GROUP4.2008.4638213","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638213","url":null,"abstract":"We demonstrate a method of canceling the temperature dependence of ring resonator sensors using a double ring configuration. Temperature calibration curves are provided for SOI photonic wire ring sensors with air and SU8 polymer cladding.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130557702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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