{"title":"Silicon nanocrystals in silicon nitride structures: Towards efficient light emission under optical and electrical pumping","authors":"L. Dal Negro, R. Li, J. Warga, S. Basu","doi":"10.1109/GROUP4.2008.4638088","DOIUrl":null,"url":null,"abstract":"In this paper, we will discuss light emission, Er sensitization and electroluminescence from small (2 nm-diameter) Si nanoclusters embedded in silicon nitride/Si superlattice structures fabricated by direct co-sputtering on Si substrates. In particular, we will show efficient Er emission sensitization via controllable non-radiative energy transfer and we will demonstrate enhanced electroluminescence from superlattice-based electrical devices. Our results demonstrate that small Si clusters embedded in silicon nitride-based matrices provide alternative routes towards the fabrication of Si-compatible optical devices based on Er sensitization.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"660 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we will discuss light emission, Er sensitization and electroluminescence from small (2 nm-diameter) Si nanoclusters embedded in silicon nitride/Si superlattice structures fabricated by direct co-sputtering on Si substrates. In particular, we will show efficient Er emission sensitization via controllable non-radiative energy transfer and we will demonstrate enhanced electroluminescence from superlattice-based electrical devices. Our results demonstrate that small Si clusters embedded in silicon nitride-based matrices provide alternative routes towards the fabrication of Si-compatible optical devices based on Er sensitization.