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2008 5th IEEE International Conference on Group IV Photonics最新文献

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35 GHz Ge p-i-n photodetectors implemented using RPCVD 利用RPCVD实现35 GHz Ge p-i-n光电探测器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638141
Dongwoo Suh, Sanghoon Kim, Jiho Joo, Gyungock Kim, I. Kim
{"title":"35 GHz Ge p-i-n photodetectors implemented using RPCVD","authors":"Dongwoo Suh, Sanghoon Kim, Jiho Joo, Gyungock Kim, I. Kim","doi":"10.1109/GROUP4.2008.4638141","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638141","url":null,"abstract":"Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3 V, dark current of 30 nA, and responsivity of 0.47 A/W for 20 mum-diameter detectors.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130416850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Modeling direct modulation dynamics in silicon nanocrystal light emitting transistors 硅纳米晶体发光晶体管的直接调制动力学建模
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638188
J. Carreras, B. Garrido
{"title":"Modeling direct modulation dynamics in silicon nanocrystal light emitting transistors","authors":"J. Carreras, B. Garrido","doi":"10.1109/GROUP4.2008.4638188","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638188","url":null,"abstract":"We investigate the physical mechanisms that compromise the modulation speed of electroluminescence (EL) from silicon nanocrystals (Si-nc) embedded in the gate oxide of field effect transistors. A rate equation that explicitly includes an Auger term proportional to the charge density in the silicon nanocrystal layer is used to study the observed modulation. It is found that the main frequency limitation arises from the luminescence rise time. A comparison between simulation and experiment shows that the reported value of the absorption cross-section of electrically excited Si-nc (sigmaSi=10-14 cm2) is strongly dependent on the particular device implementation. We find that an ideal silicon nanocrystal embedded in a defect-free SiO2 must have an intrinsic absorption cross-section of ~ sigmaSi=10-12 cm2 which means that there is a wide margin for electrical injection optimization.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127890485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Vertical grating couplers for silicon sandwiched slot waveguides 用于硅夹缝波导的垂直光栅耦合器
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638112
J. V. Galán, J. Blasco, P. Sanchis, A. Martínez, J. Marti, J. Fédéli, E. Jordana, P. Gautier, M. Perrin
{"title":"Vertical grating couplers for silicon sandwiched slot waveguides","authors":"J. V. Galán, J. Blasco, P. Sanchis, A. Martínez, J. Marti, J. Fédéli, E. Jordana, P. Gautier, M. Perrin","doi":"10.1109/GROUP4.2008.4638112","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638112","url":null,"abstract":"Grating couplers for efficient vertical coupling between sandwiched slot waveguides and standard single-mode fibers are demonstrated. 20% coupling efficiency is experimentally measured. Higher coupling efficiency is expected for particular designs according to simulation results.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124449067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Group velocity dispersion in horizontal slot waveguides filled by Si nanocrystals 硅纳米晶填充水平槽波导中的群速度色散
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638184
R. Spano, J. V. Galán, P. Sanchis, A. Martínez, J. Marti, Lorenzo Pavesi
{"title":"Group velocity dispersion in horizontal slot waveguides filled by Si nanocrystals","authors":"R. Spano, J. V. Galán, P. Sanchis, A. Martínez, J. Marti, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638184","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638184","url":null,"abstract":"A study of group velocity dispersion of horizontal slot waveguides filled by Si nanocrystals with different Silicon concentrations has revealed a change in the sign of GVD from negative to positive values across the third telecom window.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126867158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Focusing polarization diversity gratings for Silicon-on-Insulator integrated circuits 用于绝缘体上硅集成电路的聚焦极化分集光栅
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638145
F. Van Laere, W. Bogaerts, P. Dumon, G. Roelkens, D. van Thourhout, R. Baets
{"title":"Focusing polarization diversity gratings for Silicon-on-Insulator integrated circuits","authors":"F. Van Laere, W. Bogaerts, P. Dumon, G. Roelkens, D. van Thourhout, R. Baets","doi":"10.1109/GROUP4.2008.4638145","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638145","url":null,"abstract":"We present experimental results for focusing grating couplers for coupling between optical fiber and nanophotonic silicon-on-insulator waveguides in polarization diversity configuration. The footprint is reduced by a factor of 8 compared to standard grating couplers.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126607242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Silicon photonics front-end integration in high-speed 0.25μm SiGe BiCMOS 高速0.25μm SiGe BiCMOS中的硅光子前端集成
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638204
L. Zimmermann, K. Voigt, G. Winzer, D. Wolansky, S. Geisler, H. Richter, B. Tillack
{"title":"Silicon photonics front-end integration in high-speed 0.25μm SiGe BiCMOS","authors":"L. Zimmermann, K. Voigt, G. Winzer, D. Wolansky, S. Geisler, H. Richter, B. Tillack","doi":"10.1109/GROUP4.2008.4638204","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638204","url":null,"abstract":"Modular integration of photonic functionality in the front-end of line of a qualified 0.25 mum SiGe BiCMOS technology is considered. First measurements of electronic & waveguide test structures are presented.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121288378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design, fabrication, and characterization of a 1D microcavity for enhanced luminescence from silicon nanocrystals 用于增强硅纳米晶体发光的一维微腔的设计、制造和表征
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638189
B. Redding, T. Creazzo, E. Marchena, S. Shi, D. Prather
{"title":"Design, fabrication, and characterization of a 1D microcavity for enhanced luminescence from silicon nanocrystals","authors":"B. Redding, T. Creazzo, E. Marchena, S. Shi, D. Prather","doi":"10.1109/GROUP4.2008.4638189","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638189","url":null,"abstract":"We present the design of a 1D microcavity with an active silicon nanocrystal (Si-nc) region for enhanced photo- and electro-luminescence. Microcavity enhanced photoluminescence is realized experimentally and incorporation with a presented electroluminescent structure is discussed.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121449444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra broadband SOI binary blazed grating mirror 超宽带SOI二元燃烧光栅反射镜
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638179
Huaming Wu, Yi Wang, Junbo Feng, Yao Chen, J. Hou, D. Gao, Zhiping Zhou
{"title":"Ultra broadband SOI binary blazed grating mirror","authors":"Huaming Wu, Yi Wang, Junbo Feng, Yao Chen, J. Hou, D. Gao, Zhiping Zhou","doi":"10.1109/GROUP4.2008.4638179","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638179","url":null,"abstract":"A novel SOI grating mirror based on thin binary blazed grating layer is presented. The binary blazed grating mirror (BBGM) has the characteristics of ultra broadband reflection spectrum, high reflectivity and large angular tolerances.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128918113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Enhanced direct bandgap emission from germanium-based ring resonators 锗基环形谐振器增强直接带隙发射
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638198
P. Lim, Y. Kobayashi, S. Takita, Y. Ishikawa, K. Wada
{"title":"Enhanced direct bandgap emission from germanium-based ring resonators","authors":"P. Lim, Y. Kobayashi, S. Takita, Y. Ishikawa, K. Wada","doi":"10.1109/GROUP4.2008.4638198","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638198","url":null,"abstract":"We report the room temperature enhancement of direct bandgap emission from germanium microcavities with wavelength-scale dimensions and high optical confinement. A decline in the emission enhancement with lower Qs is attributed to the Purcell effect.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128956922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ge/SiGe multiple quantum wells for optical applications 光学应用的Ge/SiGe多量子阱
2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI: 10.1109/GROUP4.2008.4638142
D. Chrastina, A. Neels, M. Bonfanti, M. Virgilio, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, H. von Kanel
{"title":"Ge/SiGe multiple quantum wells for optical applications","authors":"D. Chrastina, A. Neels, M. Bonfanti, M. Virgilio, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, H. von Kanel","doi":"10.1109/GROUP4.2008.4638142","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638142","url":null,"abstract":"High-quality Ge/Si0.15Ge0.85 multiple quantum wells have been grown by low-energy plasma-enhanced chemical vapor deposition. Structural and optical properties have been measured by X-ray diffraction, optical transmission, photoluminescence and photocurrent experiments.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128710064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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