光学应用的Ge/SiGe多量子阱

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638142

D. Chrastina, A. Neels, M. Bonfanti, M. Virgilio, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, H. von Kanel

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引用次数: 2

摘要

利用低能等离子体增强化学气相沉积技术制备了高质量的Ge/Si0.15Ge0.85多量子阱。通过x射线衍射、光透射、光致发光和光电流实验测量了其结构和光学性能。

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Ge/SiGe multiple quantum wells for optical applications

High-quality Ge/Si0.15Ge0.85 multiple quantum wells have been grown by low-energy plasma-enhanced chemical vapor deposition. Structural and optical properties have been measured by X-ray diffraction, optical transmission, photoluminescence and photocurrent experiments.

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2008 5th IEEE International Conference on Group IV Photonics

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