利用RPCVD实现35 GHz Ge p-i-n光电探测器

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638141

Dongwoo Suh, Sanghoon Kim, Jiho Joo, Gyungock Kim, I. Kim

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引用次数: 8

摘要

采用RPCVD技术在硅基上制备了垂直锗探测器，在-3 V下带宽为35 GHz，暗电流为30 nA, 20微米直径探测器的响应率为0.47 A/W。

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35 GHz Ge p-i-n photodetectors implemented using RPCVD

Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3 V, dark current of 30 nA, and responsivity of 0.47 A/W for 20 mum-diameter detectors.

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2008 5th IEEE International Conference on Group IV Photonics

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