Low dark-current Ge photodiodes on Si with intrinsic-Si-layer insertion

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638137

Sungbong Park, S. Takita, Y. Ishikawa, J. Osaka, K. Wada

引用次数: 1

Abstract

We demonstrated as-grown Ge p-i-n photodiode on Si with low dark current (~10 mA/cm2) and comparable responsivity. Such a low temperature fabrication is crucial to realize ldquobackendrdquo process for Ge integration in Si photonics.

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具有本征硅层插入的低暗电流锗光电二极管

我们在Si上展示了生长的Ge p-i-n光电二极管，具有低暗电流(~10 mA/cm2)和相当的响应性。这样的低温制造对于实现硅光子学中锗集成的低量子背景工艺至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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