ErxY2−xSiO5 thin film waveguide for high optical gain per length at 1.53 μm

Abstract

Ridge-type Er_xY_2-xSiO₅ waveguides were fabricated. Amorphous Er_xY_2-xSiO₅ was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scattering and multimodedness of waveguide.