40 GHz带宽的Ge on Si p-i-n光电探测器

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638140

S. Klinger, W. Vogel, M. Berroth, M. Kaschel, M. Oehme, E. Kasper

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引用次数: 6

摘要

生长在硅衬底上的锗光电二极管具有不同直径和不同厚度的主动吸收区。据报道，使用矢量网络分析仪进行的高频测量频率高达45 GHz，显示出40 GHz的记录带宽。

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Ge on Si p-i-n photodetectors with 40 GHz bandwidth

Germanium photodiodes grown on a silicon substrate are characterized for various diameters and thicknesses of the active absorption region. High frequency measurements using a vector network analyzer are reported for frequencies up to 45 GHz showing a record bandwidth of 40 GHz.

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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