Monolithic integration of the III/V laser material Ga(NAsP) lattice-matched on (001) Silicon substrate

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638101

B. Kunert, I. Nemeth, S. Zinnkann, R. Fritz, G. Lukin, K. Volz, W. Stolz

引用次数: 0

Abstract

Multi quantum well (MQW) heterostructures in the GaP-based dilute nitride Ga(NAsP) were pseudomorphically grown on exact oriented (001) Silicon substrates without the formation of misfit dislocations. Efficient room temperature photoluminescence has been observed.

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栅格匹配III/V激光材料Ga(NAsP)在(001)硅衬底上的单片集成

在精确取向(001)硅衬底上生长了基于gap的稀氮化镓(NAsP)中的多量子阱(MQW)异质结构，没有形成错配位错。已观察到有效的室温光致发光。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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