Lifetime measurements of group V donor Rydberg states in silicon at THz frequencies

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638084

S. Lynch, P. Greenland, N. Q. Vinh, K. Litvinenko, B. Redlich, L. van der Meer, M. Warner, A. Stoneham, G. Aeppli, C. Pidgeon, B. Murdin

引用次数: 1

Abstract

We have measured the T1 lifetimes of Rydberg states of phosphorus and arsenic in silicon at THz frequencies using the FELIX pulsed free electron laser. Our results show the dominant decoherence mechanism is lifetime broadening.

查看原文本刊更多论文

太赫兹频率下硅中V族给体里德堡态的寿命测量

我们用FELIX脉冲自由电子激光测量了太赫兹频率下硅中磷和砷的里德堡态的T1寿命。我们的结果表明，主要的退相干机制是寿命展宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 5th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量