Si晶化演化对Er:Si /Al2O3超晶格中Er发光的影响

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638115

J.Z. Wang, Y. Shi, Z. Shi, Z. Tao, X.L. Zhang, L. Pu, E. Ma, R. Zhang, Y.D. Zheng, F. Lu

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引用次数: 0

摘要

采用脉冲激光沉积(PLD)技术制备了Er:Si/Al2O3超晶格。进行了光致发光(PL)和PL激发光谱测量。给出了随退火温度变化的光强曲线。Si晶化对Er离子发光的影响表明，Si层越薄，距离r越短，其敏化性能越好。

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Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3

Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.

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2008 5th IEEE International Conference on Group IV Photonics

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