Photovoltaic effect in ultra-thin a-Si/SiO2 multilayered structures

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638210

A. A. Shatveryan, A. Anopchenko, S. M. Hossain, A. Marconi, M. Wang, G. Pucker, P. Bellutti, Lorenzo Pavesi

引用次数: 0

Abstract

Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.

查看原文本刊更多论文

超薄a-Si/SiO2多层结构中的光伏效应

研究了PECVD生长并在1150℃下退火的超薄a-Si/SiO2多层膜的光伏和光导性能。由于从界面阱态产生二次载流子，可以观察到大于1的量子产率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 5th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量