GeSiSn/Ge量子壳激光器的设计

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638170

G. Sun, J. Khurgin, J. Menéndez, R. Soref

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引用次数: 1

摘要

我们设计了一种晶格匹配的、发射频率为49 μ m的Ge/Ge0.76Si0.19Sn0.05量子级联激光器。这种特殊的合金成分在l -谷具有150mev的低清洁导带偏移量，而其他所有能量谷的能量都较高。

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Design of GeSiSn/Ge quantum cascase laser

We design a lattice-matched Ge/Ge_0.76Si_0.19Sn_0.05 quantum cascade laser emitting at 49 mum. This particular alloy composition gives a ldquocleanrdquo conduction band offset of 150 meV at L-valleys with all other energy valleys sitting higher in energy.

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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