{"title":"Si/SiOx异质结构中的光伏效应","authors":"R. van Loon, K. Catchpole, A. Polman","doi":"10.1109/GROUP4.2008.4638211","DOIUrl":null,"url":null,"abstract":"Si/SiOx heterostructures show a photovoltaic effect when the samples are annealed to form Si quantum dots. Subsequently applying dielectric breakdown increases the short-circuit current by up to an order of magnitude.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photovoltaic effect in Si/SiOx heterostructures\",\"authors\":\"R. van Loon, K. Catchpole, A. Polman\",\"doi\":\"10.1109/GROUP4.2008.4638211\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si/SiOx heterostructures show a photovoltaic effect when the samples are annealed to form Si quantum dots. Subsequently applying dielectric breakdown increases the short-circuit current by up to an order of magnitude.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638211\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si/SiOx heterostructures show a photovoltaic effect when the samples are annealed to form Si quantum dots. Subsequently applying dielectric breakdown increases the short-circuit current by up to an order of magnitude.