The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638164

P. Kuindersma, T. Hoang, J. Schmitz, M. Vijayaraghavan, M. Dijkstra, W. van Noort, T. Vanhoucke, William C. Peters, M.C.J.C.M. Kramer

引用次数: 14

Abstract

We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.

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标准BiCMOS工艺中可见发光器件的功率转换效率

我们在实验和理论上证明了在标准BiCMOS工艺中制造的可见光发射器件的击穿电压和功率效率之间存在单一且独特的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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