B. Cheng, H. Xue, D. Hu, G. Han, Y. Zeng, A. Bai, C. Xue, L. Luo, Y. Zuo, Q.M. Wang
{"title":"在点蚀锗缓冲层上生长出低螺纹位错密度的锗薄膜","authors":"B. Cheng, H. Xue, D. Hu, G. Han, Y. Zeng, A. Bai, C. Xue, L. Luo, Y. Zuo, Q.M. Wang","doi":"10.1109/GROUP4.2008.4638124","DOIUrl":null,"url":null,"abstract":"A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290degC. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600degC with a threading dislocation density of ~1times105cm-2. According to channeling and random Rutherford backscattering spectrometry spectra, a chimin value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33 nm.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer\",\"authors\":\"B. Cheng, H. Xue, D. Hu, G. Han, Y. Zeng, A. Bai, C. Xue, L. Luo, Y. Zuo, Q.M. Wang\",\"doi\":\"10.1109/GROUP4.2008.4638124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290degC. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600degC with a threading dislocation density of ~1times105cm-2. According to channeling and random Rutherford backscattering spectrometry spectra, a chimin value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33 nm.\",\"PeriodicalId\":210345,\"journal\":{\"name\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 5th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2008.4638124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 5th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2008.4638124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290degC. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600degC with a threading dislocation density of ~1times105cm-2. According to channeling and random Rutherford backscattering spectrometry spectra, a chimin value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33 nm.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
