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Magneto-Optic Kerr Imaging Technique for Localizing Magnetic Failures 磁光Kerr成像技术定位磁故障
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0249
Ricky Anthony, Jer O’Sullivan
{"title":"Magneto-Optic Kerr Imaging Technique for Localizing Magnetic Failures","authors":"Ricky Anthony, Jer O’Sullivan","doi":"10.31399/asm.cp.istfa2023p0249","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0249","url":null,"abstract":"Abstract The paper describes the Magneto-Optic Kerr (MOKE) Imaging technique for imaging magnetic response of soft magnetic materials at external magnetic field. This method can be applied for investigating domain wall formations and propagation, localizing magnetic failing sites, and analyzing hysteresis response of the films at varying magnetic field strengths. The paper describes some use cases of this technique for failure analysis in magnetic sensors, whereby in some cases delayering have been developed prior to imaging.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"100 15","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices 原位正交透射电镜片层转换捕捉微处理器器件中三维晶体管的细微缺陷
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0305
Dionaldo Zudhistira, Ho Mun-Yee, Vinod Narang
{"title":"In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices","authors":"Dionaldo Zudhistira, Ho Mun-Yee, Vinod Narang","doi":"10.31399/asm.cp.istfa2023p0305","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0305","url":null,"abstract":"Abstract Miniaturization of today’s semiconductor devices and increased complexity of transistor architecture have resulted in gradually shrinking defect sizes. A direct consequence to this is the diminished chance of catching defects in the Transmission Electron Microscope (TEM) on the initial lamella, prompting the need to convert the TEM lamellas to analyze them from a different angle. In this work, a reliable step-by-step procedure to perform in-situ TEM lamella conversion is detailed. The applicability of the method is successfully validated on defective sub-20nm FinFET samples. Two different initial lamella types –planar and cross-sectional – are featured in the case studies to demonstrate the method’s versatility.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"100 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis 光束减速在提高物理失效分析SEM图像质量中的应用
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0201
Robert Scott, Tim Schnutenhaus, Andres Torres, Nathan McEwen, Kah Chin Cheong, Christopher Penley
{"title":"Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis","authors":"Robert Scott, Tim Schnutenhaus, Andres Torres, Nathan McEwen, Kah Chin Cheong, Christopher Penley","doi":"10.31399/asm.cp.istfa2023p0201","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0201","url":null,"abstract":"Abstract As technology nodes continue to shrink, Scanning Electron Microscopy (SEM) inspection and electrical characterization of transistors has increased in difficultly. This is particularly true with early back end-of-line (BEOL) features like metal and via layers which are traditionally imaged at 3-5 keV. At these layers, this energy is capable of beam contamination, introducing electrical complications particularly with transistor probing. This electrical data is necessary to characterize subtle defects at front end-of-line (FEOL). Thus, the implementation of beam deceleration for the inspection of these layers provides a useful combination of low landing energy and higher image quality. This technique proves to aid in preserving the ability to electrically characterize any defect at the subsequent layers beneath. This increases the quality of the Physical Failure Analysis (pFA) workflow when implemented at early BEOL layers by providing higher quality images as well as preserving the electrical properties of the transistors for subtle FEOL defect characterization.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"99 21","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tomography of Electrical Data in Advanced-Node SRAMs 高级节点sram的电数据断层扫描
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0561
Gregory M. Johnson, Frank Hitzel
{"title":"Tomography of Electrical Data in Advanced-Node SRAMs","authors":"Gregory M. Johnson, Frank Hitzel","doi":"10.31399/asm.cp.istfa2023p0561","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0561","url":null,"abstract":"Abstract A commercially available 6T SRAM was examined with an AFM-in-SEM system. A conductive AFM measurement was taken using an AC bias on the backside of the sample with a linear amplifier on the data. Then using a cone-shaped, diamond AFM tip, subsequent scans were made over the field of view at increasingly higher downforce until areas of the chip were worn away. The results provide a survey of implants and structure milling from contact level through the wells of the device. An additional experiment was performed with EBAC.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"100 25","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ICCDLAB : Silicon Chip Tooling for Failure Analysis Laboratories 用于故障分析实验室的硅芯片工具
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0214
Nicolas Lysee, Thierry Parrassin, Céline Le Gloanec, Bertrand Borot, Sylvain Dudit
{"title":"ICCDLAB : Silicon Chip Tooling for Failure Analysis Laboratories","authors":"Nicolas Lysee, Thierry Parrassin, Céline Le Gloanec, Bertrand Borot, Sylvain Dudit","doi":"10.31399/asm.cp.istfa2023p0214","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0214","url":null,"abstract":"Abstract The ICCDLAB (Integrated Circuit for Characterization and Debug Laboratory) test chip is a full custom silicon chip dedicated to failure analysis. This chip embeds several custom devices designed to highlight, reproduce, and simulate defects, as well as enhance the signatures obtained through failure analysis techniques that are used to locate defects in circuits. The ICCDLAB serves as a versatile tool for failure analysts, providing a “Swiss army knife” and a failure analysts’ playground at the same time. The chip offers a simple means of covering an exhaustive catalog of failure analysis techniques and approaches, allowing for equipment benchmarking, training of individuals new to the failure analysis field, understanding of failure mechanisms and signatures, simulation of defect behaviors, and support for development of new techniques.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"100 20","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Introduction to the FIB as a Microchip Circuit Edit Tool (2023 Update) 介绍FIB作为微芯片电路编辑工具(2023更新)
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023tpb2
Steven Herschbein, Shida Tan, Richard Livengood, Michael Wong
{"title":"An Introduction to the FIB as a Microchip Circuit Edit Tool (2023 Update)","authors":"Steven Herschbein, Shida Tan, Richard Livengood, Michael Wong","doi":"10.31399/asm.cp.istfa2023tpb2","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023tpb2","url":null,"abstract":"Abstract Presentation slides for the ISTFA 2023 Tutorial session “An Introduction to the FIB as a Microchip Circuit Edit Tool (2023 Update).”","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"97 15","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOSFET Testing and Interpretation Overview MOSFET测试和解释概述
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023tpc1
Dave Albert
{"title":"MOSFET Testing and Interpretation Overview","authors":"Dave Albert","doi":"10.31399/asm.cp.istfa2023tpc1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023tpc1","url":null,"abstract":"Abstract Presentation slides for the ISTFA 2023 Tutorial session “MOSFET Testing and Interpretation Overview.”","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"97 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Failure Caused by Extended Cross-Defect in DRAM DRAM中扩展交叉缺陷引起的故障
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0187
Jaehoon Lee, Jinseon Kim, Dongguk Han, Seunghun Lee, Sunwoo Kim, Jingyeong Seol, Seungjin Lee, Kyoungrak Cho, Incheol Nam, Daesun Kim, Beomseop Lee, Heeil Hong, Sangjun Hwang
{"title":"A Failure Caused by Extended Cross-Defect in DRAM","authors":"Jaehoon Lee, Jinseon Kim, Dongguk Han, Seunghun Lee, Sunwoo Kim, Jingyeong Seol, Seungjin Lee, Kyoungrak Cho, Incheol Nam, Daesun Kim, Beomseop Lee, Heeil Hong, Sangjun Hwang","doi":"10.31399/asm.cp.istfa2023p0187","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0187","url":null,"abstract":"Abstract As memory devices decrease in dimensions, particles are found to be a major source of defects in unexpected DRAM failures due to their relatively large size. Among many DRAM defects, cross-defects account for the majority of system failures for a long time. Hard cross-defects are frequently observed in the first test step. Most of these defective cells are repaired with row or column redundancy resources. However, after high voltage and temperature stress, some of the cross-defects can additionally spread to adjacent rows or columns with reduced resistance. Recently, a new type of bridge cross-defect accompanied by row failures has emerged. This can be detected electrically through current measurements of 2 wordline (WL) under active mode. But, these defects are not obvious even after both high temperature and voltage stress. The bridge causes intermittent failure in the row-direction during DRAM operation. This soft 2-WL bridge is considered a serious fault source that can cause uncorrectable error (UE) at the system level even though on-die error correction code (ODECC) is introduced. Therefore, it is very important to find, improve, and develop control methods on such defects for future DRAM enhancement. In this paper, 2-WL defects or extended cross-defect were intensively analyzed through electrical failure analysis (eFA) and physical FA (pFA). Results reveal fine particles as the cause.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"99 16","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Open Localization with LIT 使用LIT进行开放定位
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0238
Marc van Veenhuizen, Jinbo Wan, Shuhan Yang, Lei Peters-Wu
{"title":"Open Localization with LIT","authors":"Marc van Veenhuizen, Jinbo Wan, Shuhan Yang, Lei Peters-Wu","doi":"10.31399/asm.cp.istfa2023p0238","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0238","url":null,"abstract":"Abstract This paper discusses a method to observe open traces with the LIT. An overview is given of FA techniques capable of localizing high Ohmic fails. It is discussed how a wire can be made observable with LIT by injecting an AM modulated RF carrier signal. The electrical stimulus is described that excites the device and triggers the LIT. Results that demonstrate the capability of the technique are presented for several devices and the findings are evaluated.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"100 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect Isolation in Advanced Nodes Large Circuitry Structures using a Combination of FIB Circuit Edits and Passive Voltage Contrast 利用FIB电路编辑和无源电压对比相结合的先进节点大型电路结构缺陷隔离
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0295
Michael Allen Rodder, Gina Cha, Gil Tovar, Kah Chin Cheong, Christopher Penley
{"title":"Defect Isolation in Advanced Nodes Large Circuitry Structures using a Combination of FIB Circuit Edits and Passive Voltage Contrast","authors":"Michael Allen Rodder, Gina Cha, Gil Tovar, Kah Chin Cheong, Christopher Penley","doi":"10.31399/asm.cp.istfa2023p0295","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0295","url":null,"abstract":"Abstract In this paper, we discuss and showcase a 2-step defect isolation methodology by combining Focused Ion Beam “circuit editing” (FIB circuit edit) and Passive Voltage Contrast (PVC) imaging. The combo technique is an effective, robust, and time saving method for isolating defects in large area circuit structures for advanced nodes. The application of FIB circuit edits successfully enhanced the PVC efficiency in defect isolation. More importantly, the developed 2-step methodology improves failure analysis (FA) success rate and quality, and reduces FA turn-aroundtime (TAT).","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"100 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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