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TEM Techniques for Semiconductor Failure Analysis 半导体失效分析的透射电镜技术
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023tpk1
Sam Subramanian, Khiem Ly, Jacob Levenson, Tony Chrastecky
{"title":"TEM Techniques for Semiconductor Failure Analysis","authors":"Sam Subramanian, Khiem Ly, Jacob Levenson, Tony Chrastecky","doi":"10.31399/asm.cp.istfa2023tpk1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023tpk1","url":null,"abstract":"Abstract Presentation slides for the ISTFA 2023 Tutorial session “TEM Techniques for Semiconductor Failure Analysis.”","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"101 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mapping Conductivity and Electric Field in an AlGaAs HEMT with STEM EBIC 利用STEM EBIC技术绘制AlGaAs HEMT的电导率和电场
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0384
William A Hubbard
{"title":"Mapping Conductivity and Electric Field in an AlGaAs HEMT with STEM EBIC","authors":"William A Hubbard","doi":"10.31399/asm.cp.istfa2023p0384","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0384","url":null,"abstract":"Abstract The operation of modern semiconductor components often relies on nanoscale electronic features emerging from complicated device architectures with finely tuned composition. While the physical structure of these devices may be straightforward to image, the resulting electronic characteristics are invisible to most high-resolution imaging techniques. Here we present electron beam-induced (EBIC) imaging in the scanning transmission electron microscope (STEM) as a high-resolution imaging technique with electronic-based contrast for characterizing complex semiconductor devices. Here, as an example case, we discuss the preparation and imaging of a STEM EBIC-compatible cross section extracted from a commercial AlGaAs high electron-mobility transistor (HEMT). The device exhibits low surface leakage, as measured via electrical testing and STEM EBIC conductivity contrast. The EBIC signal in the active layer of the device is mostly confined to the InGaAs channel, indicating that the electronic structure is largely preserved following sample preparation.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"97 22","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single Bit SRAM Failure Case Study 单比特SRAM故障案例研究
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0105
Yuyan Wang, Albert Gleason, James Fox, Usha Bhimavarapu, Juan Ortiz, Huan Dang
{"title":"Single Bit SRAM Failure Case Study","authors":"Yuyan Wang, Albert Gleason, James Fox, Usha Bhimavarapu, Juan Ortiz, Huan Dang","doi":"10.31399/asm.cp.istfa2023p0105","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0105","url":null,"abstract":"Abstract Static random-access memory (SRAM) is a type of device that requires the highest reliability demands for integration density and process variations. In this study, we focus on single bit cell SRAM failures. These failures can be categorized as Hard bit cell failure, where bit cells fail the read or write operation under both higher and lower supply voltages, and Soft Bit cell failure, where failures occur at either higher or lower voltage. The analysis on SRAM Soft failure is further divided as VBOX High and VBOX Low failure, which depends on the failure mode supply voltage. With transistor dimensions continuously shrinking, the analysis of SRAM errors imposes tremendous challenges due to their small footprint. In this paper, a thorough failure analysis procedure is described for solving an SRAM yield loss issue. Different analysis techniques were applied and compared to narrow down the failure to the final root cause, including nanoprobing, Focus Ion Beam (FIB) cross-section, Scanning Spreading Resistance Microscopy (SSRM), Transmission Electron Microscopy (TEM), Electron Energy Loss Spectroscopy (EELS), Scanning Capacitance Microscopy (SCM), and stain etch.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"97 20","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inline Defect Solution to Mitigate EOL Device Failure 内联缺陷解决方案，以减轻EOL设备故障
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0101
Yong Guo, Brian MacDonald, Yanan Guo, Nathan McEwen, Juheon Kim, Christopher Penley
{"title":"Inline Defect Solution to Mitigate EOL Device Failure","authors":"Yong Guo, Brian MacDonald, Yanan Guo, Nathan McEwen, Juheon Kim, Christopher Penley","doi":"10.31399/asm.cp.istfa2023p0101","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0101","url":null,"abstract":"Abstract The challenges keep rising for fault isolation and failure analysis (FIFA) for the advanced semiconductor devices fabricated via integrated processes. Perceiving that defects randomly occurred during IC manufacturing contribute primarily to the device failures in comparison to those caused by harsh service environmental, we focus our efforts on fixing the defect issues in the processes, expecting a significant portion of the device failures may be prevented. A case study here demonstrates the procedure for fixing an inline defect issue via improving tool maintenance for the chemical-mechanical polishing (CMP) process. Through a correlative physical and chemical analysis down to atomic scale, a 10 nm diamond particle and a 10 nm metallic debris damaging one of the metal interconnect layers were defined. The analysis led to pinpointing the issue to a metal CMP process. By examining the process operation and the tool configuration, we located the diamond-missing sites on a pad-conditioning disk made with embedded diamond grits in a metal matrix. Preventive countermeasure were implemented to avoid the same defect recurring via resetting the disk life and maintenance.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"97 19","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detecting Wafer Level Cu Pillar Defects Using Advanced 3D X-ray Microscopy (XRM) with Submicron Resolution 利用先进的亚微米分辨率三维x射线显微镜(XRM)检测晶圆级铜柱缺陷
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0432
Susan Li, John Frame, Edita Madriaga-Berry, Jose Hulog, Ming Zhang, Masako Terada, Allen Gu, David Taraci
{"title":"Detecting Wafer Level Cu Pillar Defects Using Advanced 3D X-ray Microscopy (XRM) with Submicron Resolution","authors":"Susan Li, John Frame, Edita Madriaga-Berry, Jose Hulog, Ming Zhang, Masako Terada, Allen Gu, David Taraci","doi":"10.31399/asm.cp.istfa2023p0432","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0432","url":null,"abstract":"Abstract In this work we present a new defect localization capability on Wafer Level Chip Scale Packages (WLCSP) with small-scale Cu pillars using advanced 3D X-ray microscopy (XRM). In comparison to conventional microcomputed tomography (Micro-CT or microCT) flat-panel technology, the synchrotron-based optically enhanced 3D X-ray microscopy can detect very small defects with submicron resolutions. Two case studies on actual failures (one from the assembly process and one from reliability testing) will be discussed to demonstrate this powerful defect localization technique. Using the tool has helped speed up the failure analysis (FA) process by locating the defects non-destructively in a matter of hours instead of days or weeks as needed with destructive physical failure analysis.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"97 18","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Near-Field Synthetic Aperture Focusing Technique to Enhance the Inspection Capability of Multi-Layer HBM Stacks in Scanning Acoustic Microscopy 近场合成孔径聚焦技术提高多层HBM扫描声显微镜检测能力
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0448
Mario Wolf, Bugra Birki, Peter Hoffrogge, Peter Czurratis, Chaitanya Bakre, Mario Pacheco, Deepak Goyal
{"title":"Near-Field Synthetic Aperture Focusing Technique to Enhance the Inspection Capability of Multi-Layer HBM Stacks in Scanning Acoustic Microscopy","authors":"Mario Wolf, Bugra Birki, Peter Hoffrogge, Peter Czurratis, Chaitanya Bakre, Mario Pacheco, Deepak Goyal","doi":"10.31399/asm.cp.istfa2023p0448","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0448","url":null,"abstract":"Abstract This paper investigates the enhanced inspection of High Bandwidth Memory (HBM) stacks using Scanning Acoustic Microscopy (SAM). As the multi-layer structure is quite complex, sophisticated signal processing methods are employed. To improve detection capabilities and inspection time, the Synthetic Aperture Focusing Technique (SAFT) is utilized. In contrast to previous trials applying SAFT on SAM data, this contribution introduces Near Field SAFT. Reconstruction is also performed for layers between the transducer and its focus, in the near field of the transducer. This approach allows for measurements with common working distances, providing higher frequencies and improved resolution. Systematic evaluations are conducted on various measurement setups and transducers with different center frequencies and focal lengths in order to determine the most optimal measurement setup.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"97 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoprobing for Logical Cell Operational Tests 用于逻辑单元操作测试的纳米探测
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0420
Branden Long, Yang Su, Yunfei Wang, Christopher Morgan, Md Faisal Kabir, Ramya Padmanaban, Weston Hearne, Tad Daniel
{"title":"Nanoprobing for Logical Cell Operational Tests","authors":"Branden Long, Yang Su, Yunfei Wang, Christopher Morgan, Md Faisal Kabir, Ramya Padmanaban, Weston Hearne, Tad Daniel","doi":"10.31399/asm.cp.istfa2023p0420","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0420","url":null,"abstract":"Abstract We have identified a method for nanoprobing CMOS circuits at MHz frequencies using the same hardware already used for single transistor pulsing applications. In this paper we show example responses and failure isolation examples for both sequential and combinational logic cells and discuss the test setup and sample prep that were used to successfully collect the responses.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"98 21","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Expanding Failure Analysis Using Fluorescence Combined with IR and Raman 红外光谱与拉曼光谱相结合的荧光扩展失效分析
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0393
Jay Anderson, Michael K. F. Lo, Eoghan P. Dillon, Mustafa Kansiz
{"title":"Expanding Failure Analysis Using Fluorescence Combined with IR and Raman","authors":"Jay Anderson, Michael K. F. Lo, Eoghan P. Dillon, Mustafa Kansiz","doi":"10.31399/asm.cp.istfa2023p0393","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0393","url":null,"abstract":"Abstract Failure analysis of small contamination at the surface and sub-surface interface represents a major set of common microelectronics and semiconductor issues. The application of O-PTIR spectroscopy analyses provides flexibility to sample preparation and improves sensitivity to very small levels of contamination even below <1 micron in layers or particles on or just below the surface. The detection of this contamination can be limited if only bright field imaging is used to contrast the region of interest (ROI) and the surrounding structure. Adding fluorescence microscopy is an additional imaging technique that adds another layer of chemical specificity and provides locations of unseen ROI’s for additional IR and Raman spectral analysis.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"98 18","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure Localization Technique for Metal and Transistor Defects Through Avalon CAD Navigation and Focused Ion Beam Circuit Edit 基于Avalon CAD导航和聚焦离子束电路编辑的金属和晶体管缺陷故障定位技术
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0085
Joana Mae De Jesus, Mark Anthony Acedillo
{"title":"Failure Localization Technique for Metal and Transistor Defects Through Avalon CAD Navigation and Focused Ion Beam Circuit Edit","authors":"Joana Mae De Jesus, Mark Anthony Acedillo","doi":"10.31399/asm.cp.istfa2023p0085","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0085","url":null,"abstract":"Abstract Failure localization is one of the vital processes in the field of failure analysis. However, as newer fabrication processes emerge and demand for smaller transistors keeps on increasing, the complexity of failure analysis fault isolation involving micro-probing also increases along with the challenges on fault isolation equipment such as limited magnification and susceptibility to vibrations. In this paper, the capability of Focused Ion Beam (FIB) to perform circuit edit was utilized along with Avalon CAD navigation to pinpoint the location of the defects without the need of micro-probing while doing fault isolation. Results showed that through this technique, physical defect locations were successfully identified in three different case studies.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"98 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Logical to Physical SRAM Bitmap Verification with Fault Localization 逻辑到物理SRAM位图验证与故障定位
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0160
Alexander Maggiacomo, Rabindra Pahari, Torsten Schaefer, Gregory Billus, Suresh Shekar, Satish Kodali, Felix Beaudoin, Aaron Sinnott
{"title":"Logical to Physical SRAM Bitmap Verification with Fault Localization","authors":"Alexander Maggiacomo, Rabindra Pahari, Torsten Schaefer, Gregory Billus, Suresh Shekar, Satish Kodali, Felix Beaudoin, Aaron Sinnott","doi":"10.31399/asm.cp.istfa2023p0160","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0160","url":null,"abstract":"Abstract Physical Failure Analysis (PFA) is essential for SRAM yield learning, especially in new technologies or FAB transfers. For this to be successful, physical coordinates for tested bitcell failures must be accurately calculated and verified. The timeline for this process can vary dramatically based on the extent and complexity of any issues. This paper details the successful use of fault localization on isolated, voltage sensitive failures to achieve confidence in verification of physical location prior to PFA.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"99 19","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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