等离子体fib对高带宽存储封装的二维和三维测量及失效分析

Melissa Mullen, Mark McClendon, Adam Stokes, Xiaoting Gu, Pete Carleson
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引用次数: 0

摘要

3D封装架构的不断进步增加了故障隔离和故障分析(FA)方面的挑战,在执行目标根本原因分析(RCA)之前,通常需要复杂的相关工作流程和多种基于推理的方法。此外,3D封装组件(如硅通孔(tsv)和微凸点)需要地下结构表征和计量,以帮助在整个制造和集成过程中进行过程监控和开发。封装路径映射也要求增加与减小间距,TSV尺寸和模具厚度的模具堆叠,因此需要在不久的将来提高各种最先进的分析技术的准确性和精度。因此,物理故障分析(PFA)、过程监控和过程开发将依赖于在感兴趣区域(ROI)直接测量的可靠、高分辨率数据,以满足复杂性和可扩展性的挑战。本文探讨了等离子体fib (PFIB)/SEM技术在二维和三维领域的成功应用,并介绍了在封装尺度上对角连续切片作为PFA和计量的新方法。2D和3D分析将在高带宽存储器(HBM)封装案例研究中进行演示,该案例研究可以更广泛地应用于3D封装。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
2D and 3D Metrology and Failure Analysis for High Bandwidth Memory Package by Xe and Ar Plasma-FIB
Abstract Continued advancements in the architecture of 3D packaging have increased the challenges in fault isolation and failure analysis (FA), often requiring complex correlative workflows and multiple inference-based methods before targeted root cause analysis (RCA) can be performed. Furthermore, 3D package components such as through-silicon-vias (TSVs) and micro-bumps require sub-surface structural characterization and metrology to aid in process monitoring and development throughout fabrication and integration. Package road-mapping has also called for increased die stacking with decreased pitch, TSV size, and die thickness, and thus requires increased accuracy and precision of various stateof- the-art analytical techniques in the near future. Physical failure analysis (PFA), process monitoring, and process development will therefore depend on reliable, high-resolution data directly measured at the region of interest (ROI) to meet the complexity and scaling challenges. This paper explores the successful application of plasma-FIB (PFIB)/SEM techniques in 2D and 3D regimes and introduces diagonal serial sectioning at package scales as a novel approach for PFA and metrology. Both 2D and 3D analysis will be demonstrated in a high bandwidth memory (HBM) package case-study which can be applied more broadly in 3D packaging.
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