内联缺陷解决方案,以减轻EOL设备故障

Yong Guo, Brian MacDonald, Yanan Guo, Nathan McEwen, Juheon Kim, Christopher Penley
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引用次数: 0

摘要

摘要集成制程制造的先进半导体器件的故障隔离与失效分析(FIFA)面临着越来越大的挑战。认识到在IC制造过程中随机发生的缺陷主要是导致器件故障的原因,而不是由恶劣的服务环境引起的故障,我们将重点放在解决工艺中的缺陷问题上,期望可以防止很大一部分器件故障。这里的一个案例研究演示了通过改进化学机械抛光(CMP)过程的工具维护来修复内联缺陷问题的程序。通过原子尺度的相关物理和化学分析,定义了一个10 nm的金刚石颗粒和一个10 nm的破坏金属互连层的金属碎片。通过分析,我们发现问题出在金属CMP工艺上。通过检查工艺操作和工具配置,我们在金属基体中嵌入金刚石磨粒制成的衬垫调节盘上找到了钻石缺失的位置。通过对磁盘寿命的重新设定和维护,采取预防措施,避免同样的缺陷再次发生。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Inline Defect Solution to Mitigate EOL Device Failure
Abstract The challenges keep rising for fault isolation and failure analysis (FIFA) for the advanced semiconductor devices fabricated via integrated processes. Perceiving that defects randomly occurred during IC manufacturing contribute primarily to the device failures in comparison to those caused by harsh service environmental, we focus our efforts on fixing the defect issues in the processes, expecting a significant portion of the device failures may be prevented. A case study here demonstrates the procedure for fixing an inline defect issue via improving tool maintenance for the chemical-mechanical polishing (CMP) process. Through a correlative physical and chemical analysis down to atomic scale, a 10 nm diamond particle and a 10 nm metallic debris damaging one of the metal interconnect layers were defined. The analysis led to pinpointing the issue to a metal CMP process. By examining the process operation and the tool configuration, we located the diamond-missing sites on a pad-conditioning disk made with embedded diamond grits in a metal matrix. Preventive countermeasure were implemented to avoid the same defect recurring via resetting the disk life and maintenance.
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