Expanding Failure Analysis Using Fluorescence Combined with IR and Raman

Jay Anderson, Michael K. F. Lo, Eoghan P. Dillon, Mustafa Kansiz
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引用次数: 0

Abstract

Abstract Failure analysis of small contamination at the surface and sub-surface interface represents a major set of common microelectronics and semiconductor issues. The application of O-PTIR spectroscopy analyses provides flexibility to sample preparation and improves sensitivity to very small levels of contamination even below <1 micron in layers or particles on or just below the surface. The detection of this contamination can be limited if only bright field imaging is used to contrast the region of interest (ROI) and the surrounding structure. Adding fluorescence microscopy is an additional imaging technique that adds another layer of chemical specificity and provides locations of unseen ROI’s for additional IR and Raman spectral analysis.
红外光谱与拉曼光谱相结合的荧光扩展失效分析
表面和亚表面界面小污染的失效分析是微电子和半导体领域的一个重要问题。O-PTIR光谱分析的应用为样品制备提供了灵活性,并提高了对非常小的污染水平的灵敏度,即使在表面或表面以下的层或颗粒低于1微米。如果仅使用亮场成像来对比感兴趣区域(ROI)和周围结构,则这种污染的检测可能会受到限制。添加荧光显微镜是一种额外的成像技术,它增加了另一层化学特异性,并为额外的红外和拉曼光谱分析提供了看不见的ROI的位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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11 weeks
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