Detecting Wafer Level Cu Pillar Defects Using Advanced 3D X-ray Microscopy (XRM) with Submicron Resolution

Susan Li, John Frame, Edita Madriaga-Berry, Jose Hulog, Ming Zhang, Masako Terada, Allen Gu, David Taraci
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引用次数: 0

Abstract

Abstract In this work we present a new defect localization capability on Wafer Level Chip Scale Packages (WLCSP) with small-scale Cu pillars using advanced 3D X-ray microscopy (XRM). In comparison to conventional microcomputed tomography (Micro-CT or microCT) flat-panel technology, the synchrotron-based optically enhanced 3D X-ray microscopy can detect very small defects with submicron resolutions. Two case studies on actual failures (one from the assembly process and one from reliability testing) will be discussed to demonstrate this powerful defect localization technique. Using the tool has helped speed up the failure analysis (FA) process by locating the defects non-destructively in a matter of hours instead of days or weeks as needed with destructive physical failure analysis.
利用先进的亚微米分辨率三维x射线显微镜(XRM)检测晶圆级铜柱缺陷
在这项工作中,我们利用先进的3D x射线显微镜(XRM)提出了一种新的晶圆级芯片规模封装(WLCSP)的缺陷定位能力。与传统的微计算机断层扫描(Micro-CT或microCT)平板技术相比,基于同步加速器的光学增强3D x射线显微镜可以以亚微米分辨率检测非常小的缺陷。将讨论两个实际故障的案例研究(一个来自装配过程,另一个来自可靠性测试),以演示这种强大的缺陷定位技术。使用该工具可以在几小时内非破坏性地定位缺陷,从而加快故障分析(FA)过程,而不是像破坏性物理故障分析那样需要几天或几周的时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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