Chandler Rich, Wayne Harlow, Becky Muñoz, Regino Sandoval, J. Temo Davis, Scott Williams
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Electron Beam Induced Resistance Change for Isolation of Wordline Shorts in 3D Replacement Gate NAND
Abstract In this paper, we present a new application of electron beam induced resistance change (EBIRCH) as a means to spatially isolate wordline shorts in 3D replacement gate NAND for high-precision physical failure analysis (PFA).
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