{"title":"高级节点sram的电数据断层扫描","authors":"Gregory M. Johnson, Frank Hitzel","doi":"10.31399/asm.cp.istfa2023p0561","DOIUrl":null,"url":null,"abstract":"Abstract A commercially available 6T SRAM was examined with an AFM-in-SEM system. A conductive AFM measurement was taken using an AC bias on the backside of the sample with a linear amplifier on the data. Then using a cone-shaped, diamond AFM tip, subsequent scans were made over the field of view at increasingly higher downforce until areas of the chip were worn away. The results provide a survey of implants and structure milling from contact level through the wells of the device. An additional experiment was performed with EBAC.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tomography of Electrical Data in Advanced-Node SRAMs\",\"authors\":\"Gregory M. Johnson, Frank Hitzel\",\"doi\":\"10.31399/asm.cp.istfa2023p0561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract A commercially available 6T SRAM was examined with an AFM-in-SEM system. A conductive AFM measurement was taken using an AC bias on the backside of the sample with a linear amplifier on the data. Then using a cone-shaped, diamond AFM tip, subsequent scans were made over the field of view at increasingly higher downforce until areas of the chip were worn away. The results provide a survey of implants and structure milling from contact level through the wells of the device. An additional experiment was performed with EBAC.\",\"PeriodicalId\":20443,\"journal\":{\"name\":\"Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2023p0561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2023p0561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tomography of Electrical Data in Advanced-Node SRAMs
Abstract A commercially available 6T SRAM was examined with an AFM-in-SEM system. A conductive AFM measurement was taken using an AC bias on the backside of the sample with a linear amplifier on the data. Then using a cone-shaped, diamond AFM tip, subsequent scans were made over the field of view at increasingly higher downforce until areas of the chip were worn away. The results provide a survey of implants and structure milling from contact level through the wells of the device. An additional experiment was performed with EBAC.
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