A Failure Caused by Extended Cross-Defect in DRAM

Jaehoon Lee, Jinseon Kim, Dongguk Han, Seunghun Lee, Sunwoo Kim, Jingyeong Seol, Seungjin Lee, Kyoungrak Cho, Incheol Nam, Daesun Kim, Beomseop Lee, Heeil Hong, Sangjun Hwang
{"title":"A Failure Caused by Extended Cross-Defect in DRAM","authors":"Jaehoon Lee, Jinseon Kim, Dongguk Han, Seunghun Lee, Sunwoo Kim, Jingyeong Seol, Seungjin Lee, Kyoungrak Cho, Incheol Nam, Daesun Kim, Beomseop Lee, Heeil Hong, Sangjun Hwang","doi":"10.31399/asm.cp.istfa2023p0187","DOIUrl":null,"url":null,"abstract":"Abstract As memory devices decrease in dimensions, particles are found to be a major source of defects in unexpected DRAM failures due to their relatively large size. Among many DRAM defects, cross-defects account for the majority of system failures for a long time. Hard cross-defects are frequently observed in the first test step. Most of these defective cells are repaired with row or column redundancy resources. However, after high voltage and temperature stress, some of the cross-defects can additionally spread to adjacent rows or columns with reduced resistance. Recently, a new type of bridge cross-defect accompanied by row failures has emerged. This can be detected electrically through current measurements of 2 wordline (WL) under active mode. But, these defects are not obvious even after both high temperature and voltage stress. The bridge causes intermittent failure in the row-direction during DRAM operation. This soft 2-WL bridge is considered a serious fault source that can cause uncorrectable error (UE) at the system level even though on-die error correction code (ODECC) is introduced. Therefore, it is very important to find, improve, and develop control methods on such defects for future DRAM enhancement. In this paper, 2-WL defects or extended cross-defect were intensively analyzed through electrical failure analysis (eFA) and physical FA (pFA). Results reveal fine particles as the cause.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2023p0187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Abstract As memory devices decrease in dimensions, particles are found to be a major source of defects in unexpected DRAM failures due to their relatively large size. Among many DRAM defects, cross-defects account for the majority of system failures for a long time. Hard cross-defects are frequently observed in the first test step. Most of these defective cells are repaired with row or column redundancy resources. However, after high voltage and temperature stress, some of the cross-defects can additionally spread to adjacent rows or columns with reduced resistance. Recently, a new type of bridge cross-defect accompanied by row failures has emerged. This can be detected electrically through current measurements of 2 wordline (WL) under active mode. But, these defects are not obvious even after both high temperature and voltage stress. The bridge causes intermittent failure in the row-direction during DRAM operation. This soft 2-WL bridge is considered a serious fault source that can cause uncorrectable error (UE) at the system level even though on-die error correction code (ODECC) is introduced. Therefore, it is very important to find, improve, and develop control methods on such defects for future DRAM enhancement. In this paper, 2-WL defects or extended cross-defect were intensively analyzed through electrical failure analysis (eFA) and physical FA (pFA). Results reveal fine particles as the cause.
DRAM中扩展交叉缺陷引起的故障
随着存储器件尺寸的减小,颗粒由于其相对较大的尺寸而成为DRAM意外故障的主要缺陷来源。在众多的DRAM缺陷中,长期以来,交叉缺陷是造成系统故障的主要原因。在第一步测试中经常观察到硬交叉缺陷。这些缺陷细胞大多是用行或列冗余资源修复的。然而,在高压和高温应力后,一些交叉缺陷会额外扩散到相邻的行或列,电阻降低。近年来,出现了一种新型的桥梁交叉缺陷伴行破坏。这可以通过主动模式下2字线(WL)的电流测量来检测。但是,即使在高温和高压下,这些缺陷也不明显。在DRAM运行过程中,桥接会导致行方向上的间歇性故障。这种软2-WL桥被认为是一个严重的故障源,即使引入了片上纠错码(ODECC),也会导致系统级的不可纠正错误(UE)。因此,发现、改进和开发这些缺陷的控制方法对于未来的DRAM增强是非常重要的。本文通过电气故障分析(eFA)和物理故障分析(pFA)对2-WL缺陷或扩展交叉缺陷进行了深入分析。结果显示,细颗粒是原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
1
审稿时长
11 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信