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Electrical Fault Isolation of Stuck at Reset Hard Failures 复位时硬盘故障的电气故障隔离
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0054
Amrutha Sampath, Carey Wu, Kristofor Dickson
{"title":"Electrical Fault Isolation of Stuck at Reset Hard Failures","authors":"Amrutha Sampath, Carey Wu, Kristofor Dickson","doi":"10.31399/asm.cp.istfa2023p0054","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0054","url":null,"abstract":"Abstract Hard failures, especially the Stuck at Reset failures insensitive to voltage, frequency, and temperature, are among the toughest to debug using the conventional Electrical Fault Isolation Methodology. These types of failures have no test data and no diagnostic information. Because of the failure being stuck at the reset sequence and being a hard failure, methodologies like Laser-Assisted Device Alteration (LADA) cannot be carried out. Photon Emission Microscopy (PEM) may exhibit numerous differences for good vs. bad die, however, most emission signatures typically indicate where IP is stuck in reset but do not indicate the actual root cause. Laser Voltage Probe (LVP) is the most logical way to proceed, but since Power-on Reset (POR) signals typically transition only once per test in conjunction with hard power cycling, the LVP averaging became very difficult as the hard power cycling increased the time of the loop drastically. This paper discusses a novel methodology of modulating power supply voltages within a looping pattern to optically probe the critical internal POR signal transitions effectively and debug the power sequencing of the device. This method is carried out through a custom test setup where a particular power supply of interest is modulated within the test loop without powering down other supplies connected, thereby avoiding the time penalty required for complete power down and power up. The method also synchronizes internal signals associated with POR to a tester-generated trigger in order to successfully obtain recognizable internally extracted POR-associated waveforms. This methodology is conveyed by explaining a complex functional failure analysis case study while highlighting where conventional failure analysis methods could not be used directly to identify the root cause of failure. This paper also describes another case study to explain how parametric information, such as the current profile using the current probe obtained during the test on a pass vs. fail device, can provide valuable information and help debug stuck-in reset failures.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fan Out for Advanced Packaging Applications 扇出先进的包装应用
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023tpa2
Jan Vardaman, John Hunt
{"title":"Fan Out for Advanced Packaging Applications","authors":"Jan Vardaman, John Hunt","doi":"10.31399/asm.cp.istfa2023tpa2","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023tpa2","url":null,"abstract":"Abstract Presentation slides for the ISTFA 2023 Tutorial session “Fan Out for Advanced Packaging Applications.”","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LLE: Mitigating IC Piracy and Reverse Engineering by Last Level Edit LLE:通过最后的关卡编辑来减少IC盗版和逆向工程
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0360
Sazadur Rahman, Nitin Varshney, Farimah Farahmandi, Navid Asadi Zanjani, Mark Tehranipoor
{"title":"LLE: Mitigating IC Piracy and Reverse Engineering by Last Level Edit","authors":"Sazadur Rahman, Nitin Varshney, Farimah Farahmandi, Navid Asadi Zanjani, Mark Tehranipoor","doi":"10.31399/asm.cp.istfa2023p0360","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0360","url":null,"abstract":"Abstract Hardware obfuscation is a proactive design-for- trust technique against integrated circuit (IC) supply chain threats, i.e., intellectual property (IP) piracy and overproduction. Many studies have evaluated numerous obfuscation techniques, broadly classified as IC camouflaging, logic locking, and split manufacturing. In split manufacturing, threats introduced by an untrusted foundry are eliminated by manufacturing only the front-end of line (FEOL) layers in the high-end untrusted foundry, and back-end of line (BEOL) layers in the design house’s trusted low-end foundry to hide BEOL connections from the untrusted foundry. However, researchers proposed several attacks based on physical layout design heuristic, network-flow model, and placement-routing proximity to extract missing back-end of line connections. Nevertheless, split manufacturing suffers from yield due to challenges in properly aligning FEOL connections with the BEOL. This paper proposes LLE, which protects ICs from piracy and reverse-engineering by untrusted foundries. In this approach, we perform layout-level obfuscation by creating an intermediate metal layer mesh to obscure the BEOL connections from the FEOL. After fabrication from an untrusted foundry, the mesh can be edited using a focused-ion beam (FIB) editing tool in a trusted facility (e.g., FIB lab) to realize the actual inter- connection. Hence, unlike split manufacturing, LLE eliminates the requirement of a separate trusted foundry and establishes trust in the microelectronic supply chain by lowering cost and yield loss. To validate the effectiveness of LLE, we fabricated a test chip in MITLL Low- Power FDSOI CMOS Process. In the silicon test chip, we demonstrate that LLE can prevent IC piracy and reverse engineering with low costs and yield losses in the semiconductor supply chain.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Backside Analysis Strategy to Identify a Package Related Failure Mode at an Automotive Magnetic Sensor Device 汽车磁传感器器件封装相关失效模式的背面分析策略
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0109
M. Simon-Najasek, F. Naumann, S. Huebner, M. Lejoyeux, F. Altmann, A. Lindner
{"title":"Backside Analysis Strategy to Identify a Package Related Failure Mode at an Automotive Magnetic Sensor Device","authors":"M. Simon-Najasek, F. Naumann, S. Huebner, M. Lejoyeux, F. Altmann, A. Lindner","doi":"10.31399/asm.cp.istfa2023p0109","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0109","url":null,"abstract":"Abstract This paper presents a root cause analysis case study of defective Hall-effect sensor devices. The study identified a complex failure mode caused by chip-package interaction, which has a similar signature to discharging defects such as ESDFOS. However, the study revealed that the defect was induced by local mechanical force applied to IC structures due to the presence of large irregular-shaped filler particles within the mold compound. Extensive failure analysis work was conducted to identify the failure mode, including the development of a new backside analysis strategy to preserve the mold compound during IC defect localization and screening. A combination of different failure analysis techniques was used, including CMP delayering, PFIB trenching, SEM PVC imaging, and large area FIB cross-sectioning. The study found that the mold compound of the package caused thermos-mechanical strain onto the silica filler particle due to epoxy shrinkage during the molding process. Additionally, extra-large, irregularly shaped filler particles (called twin particles), located on top of the chip surface, can cause locally high compression stresses onto the IC layers, initiating cracks in the isolation layers under certain conditions forming a leakage path over the time. Thermo-mechanical finite element analysis was applied to verify the mechanical load condition for these large irregular-shaped filler particles. As a result, an additional polyimide layer was introduced onto the IC to mitigate the mechanical stress of mold compound particles to avoid this failure mode.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FIB-SEM Tomography Acquisition and Data Processing Optimization for Logic and Memory Structures FIB-SEM断层扫描采集和数据处理优化的逻辑和存储结构
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0387
Heiko Stegmann, Alexandre Laquerre
{"title":"FIB-SEM Tomography Acquisition and Data Processing Optimization for Logic and Memory Structures","authors":"Heiko Stegmann, Alexandre Laquerre","doi":"10.31399/asm.cp.istfa2023p0387","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0387","url":null,"abstract":"Abstract Focused-Ion Beam Scanning Electron Microscopy (FIB-SEM) tomography is a high resolution three-dimensional (3D) imaging method with applications in failure analysis and metrology of semiconductor devices. For the smallest logic and memory structures currently in use, it requires single-digit nanometer 3D resolution. In this resolution range, avoiding distortion artifacts in the data becomes crucial. We present examples and discuss ways to reduce the likelihood of such artifacts during the data acquisition, as well as how to mitigate them in post-processing, and therefore increase the data quality.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Event Capture with an Electron Beam Probing System 电子束探测系统的电事件捕获
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0164
Neel Leslie, James Vickers, Jennifer J Huening, Xianghong Tom Tong, Patrick Pardy
{"title":"Electrical Event Capture with an Electron Beam Probing System","authors":"Neel Leslie, James Vickers, Jennifer J Huening, Xianghong Tom Tong, Patrick Pardy","doi":"10.31399/asm.cp.istfa2023p0164","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0164","url":null,"abstract":"Abstract With the introduction of flip-chip technology, optical-based failure analysis techniques have played a critical role in many failure analysis (FA) laboratories. This is due to the unhindered access for photons to probe or emit from the transistor layer through the bulk silicon. Among the optical techniques, laser voltage imaging (LVI) and laser voltage probing (LVP), collectively called LVx, dominate because they directly expose the electrical activity of a given circuit or cell.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magneto-Optic Kerr Imaging Technique for Localizing Magnetic Failures 磁光Kerr成像技术定位磁故障
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0249
Ricky Anthony, Jer O’Sullivan
{"title":"Magneto-Optic Kerr Imaging Technique for Localizing Magnetic Failures","authors":"Ricky Anthony, Jer O’Sullivan","doi":"10.31399/asm.cp.istfa2023p0249","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0249","url":null,"abstract":"Abstract The paper describes the Magneto-Optic Kerr (MOKE) Imaging technique for imaging magnetic response of soft magnetic materials at external magnetic field. This method can be applied for investigating domain wall formations and propagation, localizing magnetic failing sites, and analyzing hysteresis response of the films at varying magnetic field strengths. The paper describes some use cases of this technique for failure analysis in magnetic sensors, whereby in some cases delayering have been developed prior to imaging.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices 原位正交透射电镜片层转换捕捉微处理器器件中三维晶体管的细微缺陷
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0305
Dionaldo Zudhistira, Ho Mun-Yee, Vinod Narang
{"title":"In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices","authors":"Dionaldo Zudhistira, Ho Mun-Yee, Vinod Narang","doi":"10.31399/asm.cp.istfa2023p0305","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0305","url":null,"abstract":"Abstract Miniaturization of today’s semiconductor devices and increased complexity of transistor architecture have resulted in gradually shrinking defect sizes. A direct consequence to this is the diminished chance of catching defects in the Transmission Electron Microscope (TEM) on the initial lamella, prompting the need to convert the TEM lamellas to analyze them from a different angle. In this work, a reliable step-by-step procedure to perform in-situ TEM lamella conversion is detailed. The applicability of the method is successfully validated on defective sub-20nm FinFET samples. Two different initial lamella types –planar and cross-sectional – are featured in the case studies to demonstrate the method’s versatility.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis 光束减速在提高物理失效分析SEM图像质量中的应用
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0201
Robert Scott, Tim Schnutenhaus, Andres Torres, Nathan McEwen, Kah Chin Cheong, Christopher Penley
{"title":"Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis","authors":"Robert Scott, Tim Schnutenhaus, Andres Torres, Nathan McEwen, Kah Chin Cheong, Christopher Penley","doi":"10.31399/asm.cp.istfa2023p0201","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0201","url":null,"abstract":"Abstract As technology nodes continue to shrink, Scanning Electron Microscopy (SEM) inspection and electrical characterization of transistors has increased in difficultly. This is particularly true with early back end-of-line (BEOL) features like metal and via layers which are traditionally imaged at 3-5 keV. At these layers, this energy is capable of beam contamination, introducing electrical complications particularly with transistor probing. This electrical data is necessary to characterize subtle defects at front end-of-line (FEOL). Thus, the implementation of beam deceleration for the inspection of these layers provides a useful combination of low landing energy and higher image quality. This technique proves to aid in preserving the ability to electrically characterize any defect at the subsequent layers beneath. This increases the quality of the Physical Failure Analysis (pFA) workflow when implemented at early BEOL layers by providing higher quality images as well as preserving the electrical properties of the transistors for subtle FEOL defect characterization.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tomography of Electrical Data in Advanced-Node SRAMs 高级节点sram的电数据断层扫描
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0561
Gregory M. Johnson, Frank Hitzel
{"title":"Tomography of Electrical Data in Advanced-Node SRAMs","authors":"Gregory M. Johnson, Frank Hitzel","doi":"10.31399/asm.cp.istfa2023p0561","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0561","url":null,"abstract":"Abstract A commercially available 6T SRAM was examined with an AFM-in-SEM system. A conductive AFM measurement was taken using an AC bias on the backside of the sample with a linear amplifier on the data. Then using a cone-shaped, diamond AFM tip, subsequent scans were made over the field of view at increasingly higher downforce until areas of the chip were worn away. The results provide a survey of implants and structure milling from contact level through the wells of the device. An additional experiment was performed with EBAC.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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