Electrical Event Capture with an Electron Beam Probing System

Neel Leslie, James Vickers, Jennifer J Huening, Xianghong Tom Tong, Patrick Pardy
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Abstract

Abstract With the introduction of flip-chip technology, optical-based failure analysis techniques have played a critical role in many failure analysis (FA) laboratories. This is due to the unhindered access for photons to probe or emit from the transistor layer through the bulk silicon. Among the optical techniques, laser voltage imaging (LVI) and laser voltage probing (LVP), collectively called LVx, dominate because they directly expose the electrical activity of a given circuit or cell.
电子束探测系统的电事件捕获
随着倒装芯片技术的引入,基于光学的失效分析技术在许多失效分析(FA)实验室中发挥了关键作用。这是由于光子可以不受阻碍地探测或发射,从晶体管层穿过大块硅。在光学技术中,激光电压成像(LVI)和激光电压探测(LVP),统称为LVx,占主导地位,因为它们直接暴露给定电路或细胞的电活动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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审稿时长
11 weeks
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