Proceedings最新文献_第5页

GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy 阴极发光光谱法表征GaN外延缺陷

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0463

Marc Fouchier, Christian Monachon, Matthew Davies

引用次数: 0

Multilayer pFIB Trenches for Multiple Tip EBAC/EBIRCH Analysis and Internal Node Transistor Characterization 用于多尖端EBAC/EBIRCH分析和内部节点晶体管表征的多层pFIB沟槽

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0403

Nick Pronin, Stefano Larentis, Carey Wu, Eric Foote, Gary Clark, Khiem Ly, Jacob Levenson, Kristofor Dickson, Charles Petri, Nelson Gomez, Tony Chrastecky

引用次数: 0

Enhancing Device Margins Using Double-Gate Oxide in Buried-Gat FETs 利用双栅氧化物提高埋栅场效应管的器件裕度

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0062

Youmin Kim

引用次数: 0

Antenna-in-Package Assurance with Radio Frequency Fingerprint 射频指纹的天线封装保证

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0323

Rouhan Noor, Liton Kumar Biswas, M. Shafkat, M. Khan, Yong-Kyu Yoon, Navid Asadizanjani

引用次数: 0

Problems and Methods of Board Level Reliability: Mechanical Shock Testing 板级可靠性的问题与方法:机械冲击试验

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0028

Micah R Hernandez

引用次数: 0

Complete Compressed Sensing System For Scanning Probe Microscopy 完整的压缩传感系统扫描探针显微镜

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0399

E.L. Principe, K.M. Scammon, B.W. Kempshall, J.J. Hagen

引用次数: 0

Nanoprobing on an MRAM Cell, Following a Backside Opening, to Extract Logical Data 在MRAM细胞上的纳米探针，在背面打开后，提取逻辑数据

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0411

Louise Dumas, Guillaume Bascoul, Christina Villeneuve-Faure, François Marc, Hélène Fremont, Christophe Guerin

{"title":"Nanoprobing on an MRAM Cell, Following a Backside Opening, to Extract Logical Data","authors":"Louise Dumas, Guillaume Bascoul, Christina Villeneuve-Faure, François Marc, Hélène Fremont, Christophe Guerin","doi":"10.31399/asm.cp.istfa2023p0411","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0411","url":null,"abstract":"Abstract The direct measurement of the memory state (i.e. bit at “0” or at “1”) on single magnetic tunnel junction (MTJ) in a commercial magnetic random access memory (MRAM) remains challenging. In this paper, we propose a probing approach to investigate the MTJ resistance and by this way determine the memory state. To reach this goal, the MRAM device needs to be prepared to create an electrical access to both sides of the MTJs. The suitable methodology consists in a backside preparation routine that creates a bevel allowing us to access the bottom side of the MTJs through vias and the top side to the bitlines. After that, two approaches are discussed to establish the electrical connection. First described is the nanoprobing technique where the electrical connection is created by two nanometric tips positioned in contact on vias and bitlines thanks to a scanning electron microscope. It is then possible to collect the current flowing through the MTJs and to evaluate the resistance. A resistance around 12 kΩ and 14 kΩ were determined for “0” and “1” bits respectively, which is in agreement with literature. Secondly, these measurements will be compared to those resulting from a near-field probing experiment done in a conductive mode. A resistance around 19 kΩ and 24 kΩ were determined for “0” and “1” bits respectively. The use of both methods allows for a cross-reference between the resistance values and a discussion on the advantages and drawbacks of both probing techniques.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"98 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On Demand Bit-Level SRAM Validation using CW 785nm Laser-Induced Fault Analysis (LIFA) 基于连续波785nm激光诱导故障分析(LIFA)的按需位级SRAM验证

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0168

Keith A. Serrels, Kris Dickson, Clifford Howard, Jose Garcia, Eric Foote, Gary Clark, Ben Gonzalez, Chinemerem Nwokolo

{"title":"On Demand Bit-Level SRAM Validation using CW 785nm Laser-Induced Fault Analysis (LIFA)","authors":"Keith A. Serrels, Kris Dickson, Clifford Howard, Jose Garcia, Eric Foote, Gary Clark, Ben Gonzalez, Chinemerem Nwokolo","doi":"10.31399/asm.cp.istfa2023p0168","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0168","url":null,"abstract":"Abstract We present the first experimental demonstration of on demand bit-level Static Random Access Memory (SRAM) validation and isolation through the exploitation of a continuous wave (CW) 785nm Laser-Induced Fault Analysis (LIFA) system. Through careful test pattern edits and the observation of a simple pass/fail flag, the ability to spatially map the physical location of pre-selected bits in 40nm, 16nm, and 5nm SRAM arrays using correlation units is confirmed. This work demonstrates a novel and highly-efficient methodology for rapid bit-level logical-to-physical identification. It also improves localization efficacy over conventional bitmap validation best-known methods (BKM) which typically rely on post-fail Photo-Emission Microscopy (PEM) and/or Soft Defect Localization / Laser-Assisted Device Alteration (LADA) performed on an actual fail unit. This new technique re-defines the state-of-the-art in SRAM bitmap validation and localization and offers a pathway to significantly improve cycle time for both product bitmap qualification and subsequent root cause identification.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"99 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-Situ TEM Observation of Tungsten Migration at Elevated Temperatures 高温下钨迁移的原位透射电镜观察

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0194

Jisung Cheon, Yangsun Park, Minsik Kim, Hyerim Yoo, Eunyeong Oh, Sungho Lee

引用次数: 0

Intricacies in the Failure Analysis of Integrated Capacitors 集成电容器失效分析的复杂性

Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0045

Christopher S. Mahinay, Christian Reyes, Ricardo Calanog, Raymond Mendaros

{"title":"Intricacies in the Failure Analysis of Integrated Capacitors","authors":"Christopher S. Mahinay, Christian Reyes, Ricardo Calanog, Raymond Mendaros","doi":"10.31399/asm.cp.istfa2023p0045","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0045","url":null,"abstract":"Abstract Integrated capacitors use metal plates such as in Metal-Insulator-Metal (MIM) and Metal-Oxide-Metal (MOM) capacitors while Polysilicon and Silicon (Si) substrate for metal-oxide-semiconductor (MOS) capacitors. Three major challenges and solutions were discussed in this technical paper. First, the failure site localization of a subtle defect in the capacitor plates. To determine the specific location of the defect site, Electron Beam Induced Current (EBIC) analysis was performed while the part was biased using a nano-probe set-up under Scanning Electron Microscopy (SEM) environment. Second, Failure Mechanism contentions between Electrically Induced Physical Damage (EIPD) or Fabrication process defect particularly, for damage site that is not at the edge of the capacitor and without obvious manifestations of Fabrication process anomalies such as bulging, void, unetched material or shifts in the planarity of the die layers. To further understand the defect site, Scanning Transmission Electron Microscopy (STEM) coupled with Energy-Dispersive X-ray Spectroscopy (EDS) were utilized to obtain high magnification imaging and elemental area mapping. Third, misled conclusion to be an EIPD site manifested by burnt and reflowed metallization. The EIPD site was only a secondary effect of a capacitor dielectric breakdown. This has been uncovered after understanding the circuit connectivity, inspections of the capacitors connected to the EIPD site, fault isolation and further physical failure analysis were performed. As results of the Failure Analysis (FA), Customer and Analog Devices Incorporated (ADI) manufacturing hold lots were accurately dispositioned and related corrective actions were precisely identified and implemented.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":"99 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0