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LADA and SDL—Powerful Techniques for Marginal Failures (2023 Update) LADA和sdl -边缘故障的强大技术(2023年更新)
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023tph1
Dan Bodoh, Nick Pronin
{"title":"LADA and SDL—Powerful Techniques for Marginal Failures (2023 Update)","authors":"Dan Bodoh, Nick Pronin","doi":"10.31399/asm.cp.istfa2023tph1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023tph1","url":null,"abstract":"Abstract Presentation slides for the ISTFA 2023 Tutorial session “LADA and SDL-Powerful Techniques for Marginal Failures (2023 Update).”","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Innovation in Copper Bond Wire Package Immersion Decapsulation Technique for Stressed Soic Products 承压产品铜键线封装浸装技术的创新
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0538
Eugene Beboso, Brian Yabut, Rona Balabbo, Mac Masiris
{"title":"Innovation in Copper Bond Wire Package Immersion Decapsulation Technique for Stressed Soic Products","authors":"Eugene Beboso, Brian Yabut, Rona Balabbo, Mac Masiris","doi":"10.31399/asm.cp.istfa2023p0538","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0538","url":null,"abstract":"Abstract This study presents a revolutionary methodology in an otherwise tedious and inconsistent manual decapsulation process of copper-wired small outline integrated circuit (SOIC) plastic package. The author explains how the consistency was achieved by adopting important changes such as (1) application of the 1-volt electrochemical bias, (2) optimization of etching solution agitation at 3.5 RPM, and (3) adoption of a symmetrical stainless-steel cathode. With the power of consistency, the added benefit of the adoption changes is the correct measurement of wire bond integrity tests such as wire pull, wire diameter, and magnitude of etch. The paper also discusses additional improvements to address the issue of long cycle time via laser ablation.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Techniques for Preparation of Damage-Free Ultrathin Cross-Section TEM Samples from Planar TEM Samples 平面TEM样品制备无损伤超薄截面TEM样品的技术
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0317
Jacob Levenson, Swaminathan Subramanian, Khiem Ly, Tony Chrastecky
{"title":"Techniques for Preparation of Damage-Free Ultrathin Cross-Section TEM Samples from Planar TEM Samples","authors":"Jacob Levenson, Swaminathan Subramanian, Khiem Ly, Tony Chrastecky","doi":"10.31399/asm.cp.istfa2023p0317","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0317","url":null,"abstract":"Abstract As integrated circuit (IC) feature dimensions have shrunk, the need for precise and repeatable sample preparation techniques has increased. In this work, the process of preparation of ultrathin planar-to-cross-section conversion transmission electron microscopy (TEM) samples using a gallium dual-column focused ion beam (FIB)/scanning electron microscope (SEM) system is examined. Sample preparation technique in this paper is aimed at repeatably isolating features in the 5-30 nm range, while limiting common issues such as amorphization, lamella warpage, and the curtain effect (or “curtaining”). This can be achieved through careful selection of FIB parameters including ion beam energy, ion beam current, stage tilt, and deposited protective layer materials and thicknesses, which are all discussed in this work.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron Beam Probing: The New Sheriff in Town for Security Analyzing of Sub- 7nm ICs - Exploring the Advantages of a Post-Photon Emission Technique 电子束探测:亚7nm集成电路安全分析的新警长——探索后光子发射技术的优势
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0346
Nitin Varshney, Chengjie Xi, Aslam A Khan, Liton Kumar Biswas, Volker Sorger, Hamed Dalir, Navid Asadizanjani
{"title":"Electron Beam Probing: The New Sheriff in Town for Security Analyzing of Sub- 7nm ICs - Exploring the Advantages of a Post-Photon Emission Technique","authors":"Nitin Varshney, Chengjie Xi, Aslam A Khan, Liton Kumar Biswas, Volker Sorger, Hamed Dalir, Navid Asadizanjani","doi":"10.31399/asm.cp.istfa2023p0346","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0346","url":null,"abstract":"Abstract The increasing demand for semiconductor chips and the outsourcing of chip fabrication have heightened vulnerability to hardware security threats. While optical probing has been used extensively for semi-invasive/non-invasive attacks, its resolution limits and obsolescence in advanced technologies have necessitated exploring other techniques. Electron-beam probing (EBP) has emerged as a powerful method, offering 20x better spatial resolution than optical probing, and applies to sub- 7nm flip-chips and advanced 3D architecture systems. However, the increased resolution of EBP also poses a threat to sensitive information on these advanced chips, calling for developing countermeasures to secure assets. By understanding the capability of EBP, the potential of using EBP to extract sensitive data such as encryption keys, soft IP, neural network parameters, and proprietary algorithms will be discussed. This paper delves into the principles behind EBP, its capabilities, challenges for this technique, and potential applications in failure analysis and potential attacks. It highlights the need for developing effective countermeasures to protect sensitive information on advanced node technologies.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EBIC in the TEM EBIC在TEM中
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023tpo1
William A. Hubbard
{"title":"EBIC in the TEM","authors":"William A. Hubbard","doi":"10.31399/asm.cp.istfa2023tpo1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023tpo1","url":null,"abstract":"Abstract Presentation slides for the ISTFA 2023 Tutorial session “EBIC in the TEM.”","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Practical Tutorial on ATE-Based Electrical Fault Isolation of Digital SoCs Using Photon Emission and Laser Voltage Imaging/Probing 基于光子发射和激光电压成像/探测的基于ate的数字soc电气故障隔离实用教程
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023tpg1
Lesly Endrinal
{"title":"A Practical Tutorial on ATE-Based Electrical Fault Isolation of Digital SoCs Using Photon Emission and Laser Voltage Imaging/Probing","authors":"Lesly Endrinal","doi":"10.31399/asm.cp.istfa2023tpg1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023tpg1","url":null,"abstract":"Abstract Presentation slides for the ISTFA 2023 Tutorial session “A Practical Tutorial on ATE-Based Electrical Fault Isolation of Digital SoCs Using Photon Emission and Laser Voltage Imaging/Probing.”","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy 阴极发光光谱法表征GaN外延缺陷
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0463
Marc Fouchier, Christian Monachon, Matthew Davies
{"title":"GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy","authors":"Marc Fouchier, Christian Monachon, Matthew Davies","doi":"10.31399/asm.cp.istfa2023p0463","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0463","url":null,"abstract":"Abstract This work reviews the capabilities of cathodoluminescence spectroscopy to monitor several key performance indicators in GaN-based High Electron Mobility Transistors (HEMTs) manufacturing. In particular, high throughput threading dislocation (TD) density measurements in the 108-109 cm-2 range are presented, together with dislocation type discrimination capabilities. Beyond these applications, other relevant topics such as buried AlGaN layers composition and Mg dopant concentration for normally off devices are introduced.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136352541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multilayer pFIB Trenches for Multiple Tip EBAC/EBIRCH Analysis and Internal Node Transistor Characterization 用于多尖端EBAC/EBIRCH分析和内部节点晶体管表征的多层pFIB沟槽
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0403
Nick Pronin, Stefano Larentis, Carey Wu, Eric Foote, Gary Clark, Khiem Ly, Jacob Levenson, Kristofor Dickson, Charles Petri, Nelson Gomez, Tony Chrastecky
{"title":"Multilayer pFIB Trenches for Multiple Tip EBAC/EBIRCH Analysis and Internal Node Transistor Characterization","authors":"Nick Pronin, Stefano Larentis, Carey Wu, Eric Foote, Gary Clark, Khiem Ly, Jacob Levenson, Kristofor Dickson, Charles Petri, Nelson Gomez, Tony Chrastecky","doi":"10.31399/asm.cp.istfa2023p0403","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0403","url":null,"abstract":"Abstract In this work, we present three case studies that highlight the novelty and effectiveness of using multiple plasma FIB trenches to simultaneously access multiple metal layers for nanoprobing failure analysis. Multilayer access enabled otherwise impossible two-tip current imaging techniques and allowed us to fully characterize suspect logic gate transistors by exposing internal nodes, while preserving higher metal inputs and outputs. The presented case studies focus on late node planar and established FinFET technologies. The delayering techniques used are not necessarily technology dependent, but highly scaled and advanced processes generally require smaller trench areas for multilayer access. The minimum trench dimensions are limited by ion beam imaging resolution and trench-nanoprobe tip geometry.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing Device Margins Using Double-Gate Oxide in Buried-Gat FETs 利用双栅氧化物提高埋栅场效应管的器件裕度
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0062
Youmin Kim
{"title":"Enhancing Device Margins Using Double-Gate Oxide in Buried-Gat FETs","authors":"Youmin Kim","doi":"10.31399/asm.cp.istfa2023p0062","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0062","url":null,"abstract":"Abstract Device shrinkage and mitigation of off-state power consumption are crucial factors in dynamic random access memory (DRAM) product development. Given the market demand for high-quality devices, the reduction and fluctuation of DRAM cell retention time, caused by interface traps, required a suitable solution for improved product quality. In this study, we propose a device structure for the reduction of GIDL current by implementing a second gate oxide in the overlapping region of the gate and the drain, and to calculate an increment in the margin for other processes from the retention time improvements, the virtual a capacitance of the bit line/a capacitance of the storage cap(Cb/Cs) evaluation was performed. This study is expected to provide a solution to the trap-induced retention- time deterioration and assist in the development of next-generation DRAM.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Antenna-in-Package Assurance with Radio Frequency Fingerprint 射频指纹的天线封装保证
Proceedings Pub Date : 2023-11-12 DOI: 10.31399/asm.cp.istfa2023p0323
Rouhan Noor, Liton Kumar Biswas, M. Shafkat, M. Khan, Yong-Kyu Yoon, Navid Asadizanjani
{"title":"Antenna-in-Package Assurance with Radio Frequency Fingerprint","authors":"Rouhan Noor, Liton Kumar Biswas, M. Shafkat, M. Khan, Yong-Kyu Yoon, Navid Asadizanjani","doi":"10.31399/asm.cp.istfa2023p0323","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2023p0323","url":null,"abstract":"Abstract Antenna-in-packaging (AiP) enables the next generation of high-performance wireless 5G mmWave communication and beyond by incorporating antenna arrays in small form factors using System in Package (SiP) technology. The trend toward heterogeneous integration and advanced packaging will likely introduce more complexity to the semiconductor supply chain. In addition, there is also the risk of becoming more susceptible to security vulnerabilities associated with advanced packaging. This paper provides an overview of the supply chain vulnerabilities in advanced packaging and heterogeneous integration, followed by the existing security, reliability issues, and assurance of AiP. Apart from discussing existing physical modalities of AiP assurance and vulnerabilities, we propose Radio Frequency Fingerprint (RFF) as a new physical modality for AiP assurance. We also discuss possible future research direction and application of RFF in AiP assurance.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136353174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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