用于多尖端EBAC/EBIRCH分析和内部节点晶体管表征的多层pFIB沟槽

Nick Pronin, Stefano Larentis, Carey Wu, Eric Foote, Gary Clark, Khiem Ly, Jacob Levenson, Kristofor Dickson, Charles Petri, Nelson Gomez, Tony Chrastecky
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引用次数: 0

摘要

在这项工作中,我们提出了三个案例研究,突出了使用多个等离子体FIB沟槽同时访问多个金属层进行纳米探测失效分析的新颖性和有效性。多层访问实现了原本不可能实现的双尖端电流成像技术,并允许我们通过暴露内部节点来充分表征可疑的逻辑门晶体管,同时保留更高的金属输入和输出。所提出的案例研究集中于后期节点平面和已建立的FinFET技术。所使用的分层技术不一定依赖于技术,但高度规模化和先进的工艺通常需要更小的沟槽区域来实现多层通道。最小沟槽尺寸受离子束成像分辨率和沟槽纳米探针尖端几何形状的限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multilayer pFIB Trenches for Multiple Tip EBAC/EBIRCH Analysis and Internal Node Transistor Characterization
Abstract In this work, we present three case studies that highlight the novelty and effectiveness of using multiple plasma FIB trenches to simultaneously access multiple metal layers for nanoprobing failure analysis. Multilayer access enabled otherwise impossible two-tip current imaging techniques and allowed us to fully characterize suspect logic gate transistors by exposing internal nodes, while preserving higher metal inputs and outputs. The presented case studies focus on late node planar and established FinFET technologies. The delayering techniques used are not necessarily technology dependent, but highly scaled and advanced processes generally require smaller trench areas for multilayer access. The minimum trench dimensions are limited by ion beam imaging resolution and trench-nanoprobe tip geometry.
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